IRFL214 Vishay, IRFL214 Datasheet - Page 7

MOSFET N-CH 250V 790MA SOT223

IRFL214

Manufacturer Part Number
IRFL214
Description
MOSFET N-CH 250V 790MA SOT223
Manufacturer
Vishay
Datasheet

Specifications of IRFL214

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 470mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
790mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.79 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFL214

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91194.
Document Number: 91194
S09-0927-Rev. B, 25-May-09
Re-applied
voltage
Reverse
recovery
current
+
-
R
G
D.U.T.
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig.14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
IRFL214, SiHFL214
V
DD
Vishay Siliconix
www.vishay.com
7

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