IRFP450APBF Vishay, IRFP450APBF Datasheet

MOSFET N-CH 500V 14A TO-247AC

IRFP450APBF

Manufacturer Part Number
IRFP450APBF
Description
MOSFET N-CH 500V 14A TO-247AC
Manufacturer
Vishay
Datasheets

Specifications of IRFP450APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
2038pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
14A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP450APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP450APBF
Manufacturer:
IR
Quantity:
25
Part Number:
IRFP450APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFP450APBF
Quantity:
1 350
Company:
Part Number:
IRFP450APBF
Quantity:
5 000
Company:
Part Number:
IRFP450APBF
Quantity:
70 000
Document Number: 91230
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l
I
I
I
P
V
dv/dt
T
T
D
D
DM
GS
STG
D
J
@ T
@ T
Drive Requirement
Avalanche Voltage and Current
dv/dt Ruggedness
@T
PFC Boost
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Effective Coss Specified ( See AN 1001)
Half Bridge, Full Bridge
Two Transistor Forward
C
C
C

= 25°C
= 100°C
= 25°C
through … are on page 8
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
DSS
300 (1.6mm from case )
HEXFET Power MOSFET
10 lbf•in (1.1N•m)
-55 to + 150
Rds(on) max
TO-247AC
Max.
190
± 30
8.7
1.5
4.1
14
56
0.40Ω
G
www.vishay.com
D
S
Units
W/°C
V/ns
14A
°C
W
I
A
V
D
1

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IRFP450APBF Summary of contents

Page 1

... Document Number: 91230 SMPS MOSFET HEXFET Power MOSFET V DSS 500V @ 10V GS @ 10V GS 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Rds(on) max I D 0.40Ω 14A TO-247AC Max. Units 14 8 190 W 1.5 W/°C ± 4.1 V/ns - 150 °C www.vishay.com 1 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA† 8.4A „ 250µ 0V 125° Conditions = 8.4A D „ = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V … DS Max. Units 760 Max. Units 0.65 ––– °C/W 40 Conditions 14A „ 14A www.vishay.com 2 ...

Page 3

... VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 13A V = 10V 100 120 140 160 ° Junction Temperature ( C) J www.vishay.com 100 3 ...

Page 4

... Single Pulse 1 1.0 1.2 1.4 10 13A V = 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms ° ° = 150 C 10ms 100 V , Drain-to-Source Voltage (V) DS www.vishay.com 75 1000 4 ...

Page 5

... T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Document Number: 91230 V DS 90% 125 150 ° 10 d(on) Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Starting T , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy 640 620 600 580 560 + 540 0 2 Fig 12d. Typical Drain-to-Source Voltage I D TOP 6.3A 8.9A BOTTOM 14A 50 75 100 125 ° J Vs. Drain Current Avalanche Current (A) av Vs. Avalanche Current www.vishay.com 150 ...

Page 7

... Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Document Number: 91230 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ =10V www.vishay.com 7 ...

Page 8

... Data and specifications subject to change without notice. PER ANSI Y14.5M, 1982. TO-247-AC. LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 1 - Gate 1 - Gate 2 - Drain 2 - Collector 1 - GATE 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain 4 - Collector 4 - DRAIN PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H DSS TAC Fax: (310) 252-7903 www.vishay.com 02/04 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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