IRFP360LCPBF Vishay, IRFP360LCPBF Datasheet

MOSFET N-CH 400V 23A TO-247AC

IRFP360LCPBF

Manufacturer Part Number
IRFP360LCPBF
Description
MOSFET N-CH 400V 23A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP360LCPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
23 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
23A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP360LCPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP360LCPBF
Manufacturer:
FSC
Quantity:
7 000
Company:
Part Number:
IRFP360LCPBF
Quantity:
1 925
Company:
Part Number:
IRFP360LCPBF
Quantity:
5 000
Company:
Part Number:
IRFP360LCPBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91227
S11-0444-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
TO-247AC
(Max.) (nC)
(nC)
(V)
(nC)
≤ 23 A, dI/dt ≤ 170 A/μs, V
= 25 V, starting T
(Ω)
D
a
J
= 25 °C, L = 4.0 mH, R
c
a
a
b
DD
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
400
110
28
45
This datasheet is subject to change without notice.
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.20
V
GS
AS
6-32 or M3 screw
at 10 V
= 23 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247AC
IRFP360LCPbF
SiHFP360LC-E3
IRFP360LC
SiHFP360LC
= 100 °C
= 25 °C
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over convertional MOSFETs.
Utilizing
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of MOSFETs offer the designer a
new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220AB devices. The TO-247AC is similar but superior to
the earlier TO-218 package because of its isolated mounting
hole.
advanced
SYMBOL
T
dV/dt
IRFP360LC, SiHFP360LC
J
V
iss
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
, C
stg
oss
GS
, C
Rating
MOSFETs
rss
- 55 to + 150
LIMIT
1200
300
± 30
400
280
2.2
4.0
1.1
23
14
91
23
28
10
www.vishay.com/doc?91000
technology
d
Vishay Siliconix
www.vishay.com
the
lbf · in
UNIT
W/°C
N · m
V/ns
mJ
mJ
RoHS*
°C
COMPLIANT
W
V
A
A
device
Available
1

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IRFP360LCPBF Summary of contents

Page 1

... S The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC IRFP360LCPbF SiHFP360LC-E3 IRFP360LC SiHFP360LC = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRFP360LC, SiHFP360LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Document Number: 91227 S11-0444-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP360LC, SiHFP360LC = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...

Page 4

... IRFP360LC, SiHFP360LC Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91227 S11-0444-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP360LC, SiHFP360LC Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ ...

Page 6

... IRFP360LC, SiHFP360LC Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91227. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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