RDN080N25 Rohm Semiconductor, RDN080N25 Datasheet
RDN080N25
Specifications of RDN080N25
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RDN080N25 Summary of contents
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... 136 150 150 C stg RDN080N25 0.3 0.3 4.5 10.0 0.1 0.1 0.2 2.8 3.2 0.2 0.1 1.2 1.3 0.8 0.1 2.54 0.5 2.54 0.5 0.75 2.6 0.5 0.05 (1) (2) (3) Equivalent Circuit Drain Gate Gate Protection Diode Source A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use ...
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... Pulsed DRAIN-SOURCE VOLTAGE : V Fig.2 Typical Output Characteristics 10 V Pulsed 125 C 1 0.1 0.01 0 DRAIN CURRENT : I (A) D Fig.5 Static Drain-Source On-State Resistance vs. Drain Current RDN080N25 Unit Conditions A V 30V 250 250V 10V, I 1mA 4A, V 10V 10V 10V 1MHz ns I 4.0A, V ...
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... (t) r(t) • th(ch-c) th(ch-c) 0.01 3. 0.01 th(ch-c) Single pulse 100 1m 10m 100m 1 10 PULSE WIDTH : PW (S) Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width RDN080N25 100 Pulsed 125 C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...