MOSFET N-CH 40V 75A D2PAK

 

PHB101NQ04T,118

Manufacturer Part NumberPHB101NQ04T,118
DescriptionMOSFET N-CH 40V 75A D2PAK
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PHB101NQ04T,118 datasheets

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PHB101NQ04T,118 cross reference pin-to-pin replacement

Part numberManufacturerVdsIdPackageConfigurationDatasheet
AP92T03GS  AP92T03GS Advanced Power Electronics Corp. 30V 80A TO-263 Single N AP92T03GP.pdf
AP70T03AS  AP70T03AS Advanced Power Electronics Corp. 30V 60A TO-263 Single N AP70T03AS.pdf
AP85T03GS-HF  AP85T03GS-HF Advanced Power Electronics Corp. 30V 75A TO-263 Single N AP85T03GP-HF.pdf
AP9468GS  AP9468GS Advanced Power Electronics Corp. 40V 80A TO-263 Single N AP9468GS.pdf
AP90T03GS  AP90T03GS Advanced Power Electronics Corp. 30V 75A TO-263 Single N AP90T03GS.pdf
AP60N03GS  AP60N03GS Advanced Power Electronics Corp. 30V 55A TO-263 Single N AP60N03GS.pdf
AP70T03GS  AP70T03GS Advanced Power Electronics Corp. 30V 60A TO-263 Single N AP70T03GP.pdf
AP92U03GS-HF  AP92U03GS-HF Advanced Power Electronics Corp. 30V 80A TO-263 Single N AP92U03GS-HF.pdf
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Specifications of PHB101NQ04T,118

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs8 mOhm @ 25A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C75AVgs(th) (max) @ Id4V @ 1mA
Gate Charge (qg) @ Vgs36.6nC @ 10VInput Capacitance (ciss) @ Vds2020pF @ 25V
Power - Max157WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other names568-2182-2
934058559118
PHB101NQ04T /T3		  
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PHB101NQ04T
N-channel TrenchMOS standard level FET
Rev. 02 — 10 March 2009
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
1.3 Applications
DC-to-DC convertors
General industrial applications
1.4 Quick reference data
Table 1.
Symbol Parameter
V
drain-source voltage T
DS
I
drain current
D
P
total power
tot
dissipation
Dynamic characteristics
Q
gate-drain charge
GD
Static characteristics
R
drain-source
DSon
on-state resistance
Quick reference
Conditions
≥ 25 °C; T
≤ 175 °C
j
j
T
= 25 °C; V
mb
GS
see
Figure
1; see
T
= 25 °C; see
mb
V
= 10 V; I
= 25 A;
GS
D
V
= 32 V; T
= 25 °C;
DS
j
see
Figure 11
V
= 10 V; I
= 25 A;
GS
D
T
= 25 °C; see
j
see
Figure 10
Product data sheet
Suitable for standard level gate drive
sources
Motors, lamps and solenoids
Uninterruptible power supplies
Min
Typ
Max
-
-
40
= 10 V;
-
-
75
Figure 3
Figure 2
-
-
157
-
12.6
-
-
6.6
8
Figure
9;
Unit
V
A
W
nC
mΩ

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PHB101NQ04T,118 Summary of contents

  • Page 1

    PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 02 — 10 March 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

  • Page 2

    ... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain [ not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description PHB101NQ04T D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) 4 ...

  • Page 3

    ... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of mounting base temperature (A) Limit R DSon = Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHB101NQ04T_2 Product data sheet N-channel TrenchMOS standard level FET 120 03aq90 ...

  • Page 4

    ... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 1 δ = 0.5 Z th(j-mb) (K/W) 0.2 0.1 0.05 0. single pulse - Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration ...

  • Page 5

    ... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...

  • Page 6

    ... NXP Semiconductors 240 ° (A) 160 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 5 V GS(th) (V) 4 max 3 typ 2 min 1 0 − Fig 7. Gate-source threshold voltage as a function of junction temperature PHB101NQ04T_2 Product data sheet N-channel TrenchMOS standard level FET ...

  • Page 7

    ... NXP Semiconductors ° DSon (mΩ Fig 9. Drain-source on-state resistance as a function of drain current; typical values ( ° Fig 11. Gate-source voltage as a function of gate charge; typical values PHB101NQ04T_2 Product data sheet 2 03aq94 1 0.5 0 -60 160 240 I D (A) Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature ...

  • Page 8

    ... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHB101NQ04T_2 Product data sheet ( 175 ° ° 0.3 0.6 0.9 Rev. 02 — 10 March 2009 PHB101NQ04T N-channel TrenchMOS standard level FET 03aq96 1 (V) © NXP B.V. 2009. All rights reserved ...

  • Page 9

    ... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 Fig 14. Package outline SOT404 (D2PAK) PHB101NQ04T_2 Product data sheet 2.5 ...

  • Page 10

    ... PHB101NQ04T_2 20090310 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHB101NQ04T separated from data sheet PHP_PHB101NQ04T-01. ...

  • Page 11

    ... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

  • Page 12

    ... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...

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