IRFH5302TR2PBF International Rectifier, IRFH5302TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5302TR2PBF
• Description: MOSFET N-CH 30V 32A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5302TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 15V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 100 W
• Gate Charge Qg: 29 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5302TR2PBFTR

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6.0
5.0
4.0
3.0
2.0
1.0
Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
2
Fig 15a. Switching Time Test Circuit
4
V GS , Gate-to-Source Voltage (V)
R G
20V
V DS
6
t p
8
≤ 0.1
≤ 1
I AS
T J = 25°C
10
D.U.T
T J = 125°C
0.01 Ω
L
12
14
16
I D = 50A
15V
DRIVER
18
+
-
+
-
20
V DD
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
90%
V
10%
V
I
DS
AS
GS
600
500
400
300
200
100
Fig 15b. Switching Time Waveforms
0
25
t
d(on)
Starting T J , Junction Temperature (°C)
t
50
t p
r
75
t
d(off)
V
(BR)DSS
TOP
BOTTOM
100
t
f
16A
8.7A
50A
125
I D
5
150