IXTP1R4N60P IXYS, IXTP1R4N60P Datasheet
IXTP1R4N60P
Manufacturer Part Number
IXTP1R4N60P
Description
MOSFET N-CH 600V 1.4A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXTY1R4N60P.pdf
(4 pages)
Specifications of IXTP1R4N60P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
5.5V @ 25µA
Gate Charge (qg) @ Vgs
5.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 Ohms
Forward Transconductance Gfs (max / Min)
1.1 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
1.4
Rds(on), Max, Tj=25°c, (?)
9.0
Ciss, Typ, (pf)
140
Qg, Typ, (nc)
5.2
Trr, Typ, (ns)
500
Pd, (w)
50
Rthjc, Max, (k/w)
2.5
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTP1R4N60P
Manufacturer:
IXYS
Quantity:
18 000
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
GS
J
JM
stg
L
© 2006 IXYS All rights reserved
DSS
DGR
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062) from case for 10 s
Plastic body for 10 s
TO-220
TO-252
TO-251
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 25 µA
= 25 µA
, V
G
= 0.5 I
= 20 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXTP 1R4N60P
IXTU 1R4N60P
IXTY 1R4N60P
,
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
0.35
600
600
±30
±40
150
300
260
1.4
2.1
1.4
4.0
0.4
75
10
50
5
±50
Max.
5.5
20
9.0
1
V/ns
mJ
mJ
° C
° C
nA
µA
µA
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
g
G = Gate
S = Source
TO-220 (IXTP)
TO-251 (IXTU)
TO-252 (IXTY)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
DS(on)
DSS
G
D
G
S
D
≤ ≤ ≤ ≤ ≤
= 600
=
G
S
D = Drain
TAB = Drain
S
9.0
1.4
DS99253E(10/05)
(TAB)
(TAB)
(TAB)
A
V
Ω Ω Ω Ω Ω
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IXTP1R4N60P Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTP 1R4N60P IXTU 1R4N60P IXTY 1R4N60P Maximum Ratings 600 = 1 MΩ 600 GS ±30 ±40 1.4 2 ≤ DSS 50 -55 ... +150 150 -55 ...
Page 2
... TO-251 (IXTU) Outline 1. Gate 2. Drain 3. Source 4. Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. ...
Page 3
... D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 2 10V 2.4 GS 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 0.2 0.4 0.6 0 Amperes D © 2006 IXYS All rights reserved C 2.2 2 1.8 1.6 1.4 1 0.8 0.6 0 3.00 2.75 2.50 2.25 2.00 6V 1.75 1 ...
Page 4
... T = 125 C J 1.5 1 0.5 0 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 1000 f = 1MHz 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 º 0.8 0.9 1 10.0 C iss 1 ...