IRLU3105PBF International Rectifier, IRLU3105PBF Datasheet

MOSFET N-CH 55V 25A I-PAK

IRLU3105PBF

Manufacturer Part Number
IRLU3105PBF
Description
MOSFET N-CH 55V 25A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLU3105PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
37 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Input Capacitance (ciss) @ Vds
710pF @ 25V
Power - Max
57W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLU3105PBF
Description
Absolute Maximum Ratings
Thermal Resistance
Features
This HEXFET ® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make this
design an extremely efficient and reliable device for use in a wide
variety of applications.
The D-Pak is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. The straight lead version
(IRLU series) is for through-hole mounting applications. Power
dissipation levels up to 1.5 watts are possible in typical surface
mount applications.
I
I
I
P
V
E
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
DM
AR
STG
D
GS
AS
AS
AR
J
θJC
θJA
θJA
@ T
@ T
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(tested)
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET
IRLR3105PbF
D-Pak
-55 to + 175
S
D
Max.
0.38
± 16
100
3.4
57
25
18
61
94
IRLR3105PbF
IRLU3105PbF
®
R
Power MOSFET
DS(on)
Max.
V
2.65
110
50
DSS
I
D
IRLU3105PbF
= 25A
I-Pak
PD - 95553B
= 0.037Ω
= 55V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
W
A
V
A
1

Related parts for IRLU3105PBF

IRLU3105PBF Summary of contents

Page 1

... See Fig.12a, 12b, 15 175 300 (1.6mm from case ) Typ. ––– ––– ––– 95553B IRLR3105PbF IRLU3105PbF ® Power MOSFET V = 55V DSS R = 0.037Ω DS(on 25A D I-Pak IRLU3105PbF Units 100 57 W W/°C ± 3.4 V/ns Max. Units 2.65 50 ° ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 5.0V 100 3.0V 2.7V 2.5V 2.25V BOTTOM 2. 0.1 2.0V 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100.00 10.00 ...

Page 4

0V MHZ C iss = rss = oss = 1200 Ciss 800 Coss 400 Crss 0 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth Single Pulse BOTT OM 50% Duty Cycle 15A ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates ...

Page 10

EXAMPLE : T HIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 SEMBLY LINE "A" Note: "P" embly line pos ition indicates Lead-Free" OR ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Related keywords