IRLU2705PBF International Rectifier, IRLU2705PBF Datasheet

MOSFET N-CH 55V 28A I-PAK

IRLU2705PBF

Manufacturer Part Number
IRLU2705PBF
Description
MOSFET N-CH 55V 28A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLU2705PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 5V
Input Capacitance (ciss) @ Vds
880pF @ 25V
Power - Max
68W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
65 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
24 A
Power Dissipation
46 W
Mounting Style
SMD/SMT
Gate Charge Qg
16.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLU2705PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLU2705PBF
Manufacturer:
IR
Quantity:
5 945
l
l
l
l
l
l
l
l
Thermal Resistance
www.irf.com
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
R
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
STG
D
GS
AR
J
AS
θJC
θJA
θJA
@ T
@ T
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2705)
Straight Lead (IRLU2705)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 100°C
= 25°C
= 25°C
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET Power MOSFET
S
D
-55 to + 175
Max.
0.45
± 16
110
110
6.8
5.0
28
20
68
16
TO-252AA
R
D-Pak
DS(on)
V
Max.
I
110
2.2
50
D
DSS
= 28A…
= 0.040Ω
= 55V
TO-251AA
I-Pak
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
1/11/05
W
A
V
A
1

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IRLU2705PBF Summary of contents

Page 1

... Fully Avalanche Rated l l Lead-Free Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 100 BOTTOM 2. 2.5V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 100 T ...

Page 4

1MHz iss 1200 rss iss oss ds gd 1000 800 C oss 600 400 ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period ...

Page 8

EXAMPLE: T HIS IS AN IRF R120 WIT H AS SEMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE AS SEMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-Free" OR INT ERNAT IONAL 8 ...

Page 9

EXAMPLE: T HIS IS AN IRF U120 WIT H ASSE MBLY LOT CODE 5678 ASSEMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" Note: "P" embly line position indicates "Lead-Free" OR INT ERNAT IONAL RECT IFIER ...

Page 10

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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