IRLU8203PBF International Rectifier, IRLU8203PBF Datasheet

MOSFET N-CH 30V 110A I-PAK

IRLU8203PBF

Manufacturer Part Number
IRLU8203PBF
Description
MOSFET N-CH 30V 110A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLU8203PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
2430pF @ 15V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLU8203PBF
Benefits
l
l
l
Absolute Maximum Ratings
l
l
l
Thermal Resistance
www.irf.com
Applications
Notes  through
R
R
R
Symbol
V
V
I
I
I
P
P
T
D
D
DM
J
DS
GS
D
D
θJC
θJA
θJA
When mounted on 1" square PCB (FR-4 or G-10 Material) .
and Current
@ T
@ T
, T
for Telecom and Industrial Use
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
Fully Characterized Avalanche Voltage
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
High Frequency Buck Converters for
Lead-Free
@T
@T
Computer Processor Power
For recommended footprint and soldering techniques refer to application note #AN-994
STG
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Linear Derating Factor
Gate-to-Source Voltage
are on page 10
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
V
30V
DSS
Typ.
–––
–––
–––
HEXFET Power MOSFET
IRLR8203PbF
-55 to + 175
R
IRLR8203PbF
IRLU8203PbF
D-Pak
DS(on)
Max.
± 20
110
0.92
120
140
76
30
69
6.8mΩ
Max.
1.09
max
110
50
IRLU8203PbF
I-Pak
110A
W/°C
Units
Units
°C/W
°C
I
W
W
V
A
V
D
1

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IRLU8203PBF Summary of contents

Page 1

... GS  ƒ ƒ Typ. ––– ––– ––– IRLR8203PbF IRLU8203PbF HEXFET Power MOSFET R max I DS(on) D 6.8mΩ 110A D-Pak I-Pak IRLR8203PbF IRLU8203PbF Max. Units 30 V ± „ 110 „ 120 140 0.92 W/°C - 175 °C Max. ...

Page 2

IRLR/U8203PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 100 BOTTOM 2.5V 2.5V 10 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000. 25°C ...

Page 4

IRLR/U8203PbF 10000 0V MHZ C iss = rss = oss = Ciss Coss 1000 Crss 100 1 ...

Page 5

LIMITED BY PACKAGE 100 100 T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 (THERMAL ...

Page 6

IRLR/U8203PbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • ...

Page 8

IRLR/U8203PbF EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" Note: "P" sembly line pos ition indicates "Lead-Free" OR INT ...

Page 9

EXAMPLE: T HIS IS AN IRFU120 WIT EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT ...

Page 10

IRLR/U8203PbF TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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