IXTP1R6N100D2 IXYS, IXTP1R6N100D2 Datasheet

MOSFET N-CH 1000V 1.6A TP220AB

IXTP1R6N100D2

Manufacturer Part Number
IXTP1R6N100D2
Description
MOSFET N-CH 1000V 1.6A TP220AB
Manufacturer
IXYS
Datasheet

Specifications of IXTP1R6N100D2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
10 Ohm @ 800mA, 0V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.6A
Gate Charge (qg) @ Vgs
27nC @ 5V
Input Capacitance (ciss) @ Vds
645pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220AB
Vds, Max, (v)
1000
Id(on), Min, (a)
1.6
Rds(on), Max, (?)
10
Vgs(off), Max, (v)
-4.5
Ciss, Typ, (pf)
645
Crss, Typ, (pf)
11
Qg, Typ, (nc)
27
Pd, (w)
100
Rthjc, Max, (ºc/w)
1.25
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
 Details
Depletion Mode
MOSFET
N-Channel
Symbol
V
V
V
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2009 IXYS CORPORATION, All Rights Reserved
GSX
DSX(off)
D(on)
J
JM
stg
L
SOLD
DSX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-263
TO-220
Test Conditions
T
Continuous
Transient
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
V
V
V
V
V
V
Test Conditions
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C
= - 5V, I
= 25V, I
= ±20V, V
= V
= 0V, I
= 0V, V
DSX
D
, V
DS
D
D
= 0.8A, Note 1
= 100μA
= 250μA
GS
= 50V, Note 1
DS
= - 5V
= 0V
Preliminary Technical Information
T
J
= 125°C
IXTA1R6N100D2
IXTY1R6N100D2
IXTP1R6N100D2
- 2.5
Characteristic Values
- 55 ... +150
- 55 ... +150
Min.
1000
1.6
Maximum Ratings
1.13 / 10
1000
0.35
2.50
3.00
±20
±30
100
150
300
260
Typ.
±100 nA
- 4.5
Nm/lb.in.
Max.
25 μA
10
2 μA
°C
°C
°C
°C
°C
W
V
Ω
V
V
V
V
A
g
g
g
V
I
R
TO-252 (IXTY)
TO-263 AA (IXTA)
TO-220AB (IXTP)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
D(on)
Flammability Classification
DS(on)
DSX
G
D S
≤ ≤ ≤ ≤ ≤
=
>
G
D
Tab = Drain
G
S
S
10Ω Ω Ω Ω Ω
1000V
1.6A
= Drain
D (Tab)
D (Tab)
D (Tab)
DS100185A(12/09)

Related parts for IXTP1R6N100D2

IXTP1R6N100D2 Summary of contents

Page 1

... DS DSX 0V 0.8A, Note 1 DS(on 0V 50V, Note 1 D(on © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Maximum Ratings 1000 ±20 ±30 100 - 55 ... +150 150 - 55 ... +150 300 260 1. 0.35 2.50 3.00 Characteristic Values Min. Typ. 1000 - 2 125° ...

Page 2

... L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 TO-252 AA (IXTY) Outline Max Dim. Millimeter nC Min. Max. A 2.19 2. 0.89 1. 0.13 1.25 °C/W b 0.64 0.89 ° ...

Page 3

... J 1.E+12 1.E+ 3.50V GS 1.E+10 - 3.75V 1.E+09 - 4.00V 1.E+08 - 4.25V 1.E+07 - 4.50V 1.E+06 - 4.75V 1.E+05 1.E+04 700 800 900 1000 1100 1200 IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Fig. 2. Extended Output Characteristics @ T 4 3.5 1V 3.0 0V 2.5 2.0 -1V 1 Volts DS Fig. 4. Drain Current @ T ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. vs. Junction Temperature 75 100 125 150 -1.5 -1.0 -0.5 0 25V GS(off DSX GS 75 100 125 150 IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Fig Normalized to I DS(on) vs. Drain Current 2.6 2.4 2.2 2 125ºC J 1.8 1.6 1.4 1 25ºC J 1.0 0.8 0.6 0.0 0.5 1.0 1 ...

Page 5

... DC Fig. 17. Maximum Transient Thermal Impedance 0.01 1,000 10 Fig. 17. Maximum Transient Thermal Impedance hvjv 0.001 0.01 Pulse Width - Seconds IXTP1R6N100D2 Fig. 14. Gate Charge V = 500V 0. 1mA NanoCoulombs G Fig. 16. Forward-Bias Safe Operating Area @ T = 75ºC ...

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