IXTA1R6N50D2 IXYS, IXTA1R6N50D2 Datasheet

MOSFET N-CH 500V 1.6A D2PAK

IXTA1R6N50D2

Manufacturer Part Number
IXTA1R6N50D2
Description
MOSFET N-CH 500V 1.6A D2PAK
Manufacturer
IXYS
Datasheet

Specifications of IXTA1R6N50D2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
2.3 Ohm @ 800mA, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
1.6A
Gate Charge (qg) @ Vgs
23.7nC @ 5V
Input Capacitance (ciss) @ Vds
645pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (3 leads + tab)
Vds, Max, (v)
500
Id(on), Min, (a)
1.6
Rds(on), Max, (?)
2.3
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
645
Crss, Typ, (pf)
16.5
Qg, Typ, (nc)
23.7
Pd, (w)
100
Rthjc, Max, (ºc/w)
-
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
 Details
Depletion Mode
MOSFET
N-Channel
Symbol
V
V
V
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2009 IXYS CORPORATION, All Rights Reserved
GSX
DSX(off)
D(on)
J
JM
stg
L
SOLD
DSX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-252
TO-263
TO-220
Test Conditions
T
Continuous
Transient
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
V
V
V
V
V
V
Test Conditions
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C
= - 5V, I
= 25V, I
= ±20V, V
= V
= 0V, I
= 0V, V
DSX
D
, V
DS
D
D
= 0.8A, Note 1
= 100μA
= 250μA
GS
= 25V, Note 1
DS
= - 5V
= 0V
Preliminary Technical Information
T
J
= 125°C
IXTA1R6N50D2
IXTY1R6N50D2
IXTP1R6N50D2
- 2.0
- 55 ... +150
- 55 ... +150
Characteristic Values
Min.
500
1.6
Maximum Ratings
1.13 / 10
0.35
2.50
3.00
500
±20
±30
100
150
300
260
Typ.
±100 nA
- 4.0
Nm/lb.in.
Max.
2.3
25 μA
2 μA
°C
°C
°C
°C
°C
W
V
Ω
V
V
V
V
A
g
g
g
V
I
R
TO-252 (IXTY)
TO-263 AA (IXTA)
TO-220AB (IXTP)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
D(on)
Flammability Classification
DS(on)
DSX
G
D S
≤ ≤ ≤ ≤ ≤
=
>
G
D
Tab = Drain
G
S
S
2.3Ω Ω Ω Ω Ω
500V
1.6A
= Drain
D (Tab)
D (Tab)
D (Tab)
DS100179A(12/09)

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IXTA1R6N50D2 Summary of contents

Page 1

... DSX(off) DS DSX 0V 0.8A, Note 1 DS(on 0V 25V, Note 1 D(on © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Maximum Ratings 500 ±20 ±30 100 - 55 ... +150 150 - 55 ... +150 300 260 1. 0.35 2.50 3.00 Characteristic Values Min. Typ. 500 - 2 125° ...

Page 2

... L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 TO-252 AA (IXTY) Outline Max Dim. Millimeter nC Min. Max. A 2.19 2. 0.89 1. 0.13 1.25 °C ...

Page 3

... J 1.E+ -2.50V GS 1.E+07 -2.75V -3.00V 1.E+06 -3.25V -3.50V 1.E+05 -3.75V 1.E+04 -4.00V 1.E+03 400 500 600 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Fig. 2. Extended Output Characteristics @ Volts DS Fig. 4. Drain Current @ T 0 100 200 300 V - Volts DS Fig. 6. Dynamic Resistance vs. Gate Voltage ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. vs. Junction Temperature 75 100 125 150 -1.0 -0.5 0.0 0.5 1 25V GS(off DSX GS 75 100 125 150 IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Fig Normalized to I DS(on) vs. Drain Current 125ºC J 2.0 1 25ºC J 1.0 0.5 0 ...

Page 5

... R 100µs 1ms 1.0 10ms 100ms DC Fig. 17. Maximum Transient Thermal Impedance 0.1 1,000 10 Fig. 17. Maximum Transient Thermal Resistance 0.001 0.01 Pulse Width - Seconds IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Fig. 14. Gate Charge V = 250V 0. 10mA NanoCoulombs G Fig. 16. Forward-Bias Safe Operating Area @ T = 75ºC C Limit ...

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