IRLU3114ZPBF International Rectifier, IRLU3114ZPBF Datasheet

MOSFET N-CH 40V 42A I-PAK

IRLU3114ZPBF

Manufacturer Part Number
IRLU3114ZPBF
Description
MOSFET N-CH 40V 42A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRLU3114ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.9 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
56nC @ 4.5V
Input Capacitance (ciss) @ Vds
3810pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
130A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
3.9mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
Threshold Voltage Vgs Typ
2.5V
Resistance Drain-source Rds (on)
6.5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
130 A
Power Dissipation
140 W
Mounting Style
SMD/SMT
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLU3114ZPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Features
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Logic Level
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Power MOSFET utilizes the latest
j
Ã
j
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
ij
(Silicon Limited)
(Silicon Limited)
(Package Limited)
h
G
IRLR3114ZPbF
D-Pak
See Fig.12a, 12b, 15, 16
Typ.
HEXFET
–––
–––
–––
10 lbf
S
D
IRLR3114ZPbF
IRLU3114ZPbF
-55 to + 175
y
Max.
in (1.1N
0.95
300
130
500
140
130
260
±16
IRLU3114ZPbF
89
42
®
R
Power MOSFET
DS(on)
I-Pak
y
V
m)
Max.
1.05
DSS
110
40
PD - 97284A
= 4.9mΩ
= 40V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRLU3114ZPBF Summary of contents

Page 1

... GS @ 10V (Package Limited Parameter 97284A IRLR3114ZPbF IRLU3114ZPbF ® HEXFET Power MOSFET 40V DSS R = 4.9mΩ DS(on) S D-Pak I-Pak IRLU3114ZPbF Max. Units 130 89 42 500 140 0.95 W/°C ±16 130 mJ 260 See Fig.12a, 12b 175 300 lbf in (1.1N m) Typ. Max. Units ––– ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 4.5V 100 3.5V 3.0V 2.7V BOTTOM 2. 2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Limited By Package 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 150 TOP Single ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates ...

Page 10

EXAMPLE : T HIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 SEMBLY LINE "A" Note: "P" embly line pos ition indicates Lead-Free" OR ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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