IRFB3607PBF International Rectifier, IRFB3607PBF Datasheet

IRFB3607PBF

Manufacturer Part Number

IRFB3607PBF

Description

MOSFET N-CH 75V 80A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFB3607PBF.pdf (11 pages)

Specifications of IRFB3607PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

9 mOhm @ 46A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

80A

Vgs(th) (max) @ Id

4V @ 100µA

Gate Charge (qg) @ Vgs

84nC @ 10V

Input Capacitance (ciss) @ Vds

3070pF @ 50V

Power - Max

140W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

N Channel

Continuous Drain Current Id

80A

Drain Source Voltage Vds

75V

On Resistance Rds(on)

7.34mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

80 A

Power Dissipation

140 W

Mounting Style

Through Hole

Gate Charge Qg

56 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB3607PBF

Manufacturer:

FSC

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFB3607PBF

Manufacturer:

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFB3607PBF

Company:

H&T Electronics

Part Number:

IRFB3607PBF

Quantity:

4 800

Company:

H&T Electronics

Part Number:

IRFB3607PBF

Quantity:

50 000

Current page: 1 of 11
Download datasheet (417Kb)

Applications

Benefits

www.irf.com

Absolute Maximum Ratings

dv/dt

Avalanche Characteristics

Thermal Resistance

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

High Efficiency Synchronous Rectification in

SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

Fully Characterized Capacitance and

Avalanche SOA

Enhanced body diode dV/dt and dI/dt

Capability

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Junction-to-Case

Case-to-Sink, Flat Greased Surface, TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D

Parameter

Ã™

@ 10V

Pak

IRFB3607PbF

TO-220AB

Gate

DSS

DS(on)

Typ.

0.50

–––

10lb

IRFSL3607PbF

-55 to + 175

IRFB3607PbF

IRFS3607PbF

typ.

IRFS3607PbF

in (1.1N

max.

Max.

0.96

Drain

310

140

± 20

300

120

HEXFET Power MOSFET

™

Pak

Max.

1.045

–––

7.34m

Source

9.0m

IRFSL3607PbF

75V

80A

TO-262

Units

W/°C

°C/W

V/ns

04/30/2010

°C

Related parts for IRFB3607PBF

IRFB3607PBF Summary of contents

Page 1

... Junction-to-Case θJC R Case-to-Sink, Flat Greased Surface, TO-220 θCS R Junction-to-Ambient, TO-220 θJA R Junction-to-Ambient (PCB Mount θJA www.irf.com TO-220AB IRFB3607PbF Parameter @ 10V Ã™ g Parameter Pak IRFB3607PbF IRFS3607PbF IRFSL3607PbF HEXFET Power MOSFET V 75V DSS R typ. 7.34m DS(on) max. 9.0m I 80A Pak IRFS3607PbF IRFSL3607PbF ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 4.5V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

175° 25°C 1 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

D = 0.50 0.20 0.10 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.00 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 ...

Page 6

100µA 2 250µ 1.0mA 2 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ...

Page 7

D.U.T + ƒ ‚ - R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...

Page 8

Y6HQG ) UCDTÃDTÃ6IÃDSA Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" TO-220AB packages are not recommended for Surface Mount Application. 8 DIU SI6UDPI6G S 8UDAD S ...

Page 9

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ www.irf.com DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S A$"T 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! ...

Page 10

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 10 DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ 5 DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` ...

Page 11

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD ...

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