IRFB5615PBF International Rectifier, IRFB5615PBF Datasheet

MOSFET N-CH 150V 35A TO-220AB

IRFB5615PBF

Manufacturer Part Number
IRFB5615PBF
Description
MOSFET N-CH 150V 35A TO-220AB
Manufacturer
International Rectifier
Datasheet

Specifications of IRFB5615PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
39 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1750pF @ 50V
Power - Max
144W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
35 A
Power Dissipation
144 W
Mounting Style
Through Hole
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB5615PBF
Manufacturer:
RENESAS
Quantity:
450
Part Number:
IRFB5615PBF
0
Company:
Part Number:
IRFB5615PBF
Quantity:
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Company:
Part Number:
IRFB5615PBF
Quantity:
30 000
Features
• Key Parameters Optimized for Class-D Audio
• Low R
• Low Q
• Low Q
• 175°C Operating Junction Temperature for
• Can Deliver up to 300W per Channel into 4Ω Load in
Notes  through … are on page 2
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
Amplifier Applications
Ruggedness
D
D
DM
Half-Bridge Configuration Amplifier
Efficiency
J
STG
DS
GS
D
D
θJC
θCS
θJA
@ T
@ T
@T
@T
C
C
C
C
DSON
G
RR
= 25°C
= 100°C
= 25°C
= 100°C
and Q
for Better THD and Lower EMI
for Improved Efficiency
SW
for Better THD and Improved
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
f
f
Parameter
Parameter
f
GS
GS
@ 10V
@ 10V
V
R
Q
Q
R
T
J
G
DS
DS(ON)
G(int)
g
sw
max
typ.
typ.
Gate
typ.
G
typ. @ 10V
Key Parameters
D
S
Typ.
0.50
–––
–––
IRFB5615PbF
10lb
-55 to + 175
Drain
x
in (1.1N
Max.
0.96
D
150
140
144
300
±20
35
25
72
x
m)
1.045
Max.
–––
150
175
2.7
62
32
26
11
D
TO-220AB
Source
S
Units
Units
W/°C
°C/W
°C
m
W
09/05/08
G
V
A
nC
nC
°C
V
D
S
1

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IRFB5615PBF Summary of contents

Page 1

... Junction-to-Ambient R θJA Notes  through … are on page 2 www.irf.com typ. @ 10V DS(ON) Q typ typ typ. G(int) T max Gate Parameter @ 10V GS @ 10V Parameter f f IRFB5615PbF Key Parameters 150 Ω 2.7 175 ° TO-220AB D S Drain Source Max. Units 150 V ± 140 144 ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 12V 10V 100 8.0V 7.0V 6.0V 5.5V BOTTOM 5. 5.0V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

175° 25° 1.0 0.2 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125°C 0. 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 100 Duty Cycle = Single ...

Page 6

D.U.T + ƒ • • - • + ‚ „  • G • • SD • Fig 16. HEXFET 15V DRIVER D.U 20V 0.01 Ω Fig 17a. Unclamped ...

Page 7

TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications ...

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