MOSFET N-CH 800V 7.5A TO-220

STP9NK80Z

Manufacturer Part NumberSTP9NK80Z
DescriptionMOSFET N-CH 800V 7.5A TO-220
ManufacturerSTMicroelectronics
SeriesSuperMESH™
STP9NK80Z datasheet
 


Specifications of STP9NK80Z

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs1.2 Ohm @ 3.75A, 10VDrain To Source Voltage (vdss)800V
Current - Continuous Drain (id) @ 25° C7.5AVgs(th) (max) @ Id4.5V @ 100µA
Gate Charge (qg) @ Vgs84nC @ 10VInput Capacitance (ciss) @ Vds1900pF @ 25V
Power - Max150WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-5133-5  
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N-CHANNEL 800V -0.9 - 7.5A TO-220/TO-220FP
Table 1: General Features
TYPE
V
R
DSS
DS(on)
STP9NK80Z
800 V
<1.2
STF9NK80Z
800 V
<1.2
TYPICAL R
(on) = 0.9
DS
EXTREMELY HIGH dv/dt CAPABILITY
IMPROVED ESD CAPABILITY
100% AVALANCHE RATED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES
SMPS
Table 2: Order Codes
SALES TYPE
STP9NK80Z
STF9NK80Z
May 2005
Zener-Protected SuperMESH™MOSFET
Figure 1: Package
I
Pw
D
7.5 A
150 W
7.5 A
35 W
TO-220
Figure 2: Internal Schematic Diagram
MARKING
PACKAGE
P9NK80Z
TO-220
F9NK80Z
TO-220FP
STP9NK80Z
STF9NK80Z
3
2
1
TO-220FP
PACKAGING
TUBE
TUBE
Rev. 1
1/11

STP9NK80Z Summary of contents

  • Page 1

    ... IDEAL FOR OFF-LINE POWER SUPPLIES SMPS Table 2: Order Codes SALES TYPE STP9NK80Z STF9NK80Z May 2005 Zener-Protected SuperMESH™MOSFET Figure 1: Package 7.5 A 150 W 7 TO-220 Figure 2: Internal Schematic Diagram MARKING PACKAGE P9NK80Z TO-220 F9NK80Z TO-220FP STP9NK80Z STF9NK80Z TO-220FP PACKAGING TUBE TUBE Rev. 1 1/11 ...

  • Page 2

    ... STP9NK80Z - STF9NK80Z Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

  • Page 3

    ... GS (see Figure 22) Test Conditions 7.5 A, di/dt = 100A/µ 35V 25° (see Figure 20 7.5 A, di/dt = 100A/µ 35V 150° (see Figure 20) STP9NK80Z - STF9NK80Z Min. Typ. Max. 800 = 125 °C 50 ±10 3 3.75 4.5 0.9 1.2 Min. Typ. Max. 7 1900 GS 180 ...

  • Page 4

    ... STP9NK80Z - STF9NK80Z Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP Figure 5: Output Characteristics 4/11 Figure 6: Thermal Impedance for TO-220 Figure 7: Thermal Impedance for TO-220FP Figure 8: Transfer Characteristics ...

  • Page 5

    ... Figure 9: Transconductance Figure 10: Gate Charge vs Gate-source Voltage Figure 11: Normalized Gate Thereshold Volt- age vs Temperature STP9NK80Z - STF9NK80Z Figure 12: Static Drain-source On Resistance Figure 13: Capacitance Variations Figure 14: Normalized BVDSS vs Temperature 5/11 ...

  • Page 6

    ... STP9NK80Z - STF9NK80Z Figure 15: Normalized On Resistance vs Tem- peratureS Figure 16: Avalanche Energy vs Temperature 6/11 Figure 17: Source-Drain Diode Forward Char- acteristics ...

  • Page 7

    ... Figure 18: Unclamped Inductive Load Test Cir- cuit Figure 19: Switching Times Test Circuit For Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times STP9NK80Z - STF9NK80Z Figure 21: Unclamped Inductive Wafeform Figure 22: Gate Charge Test Circuit 7/11 ...

  • Page 8

    ... STP9NK80Z - STF9NK80Z DIM. MIN. A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 øP 3.75 Q 2.65 8/11 TO-220 MECHANICAL DATA mm. TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2 ...

  • Page 9

    ... E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 2 Ø STP9NK80Z - STF9NK80Z MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 0.630 30.6 1.126 10.6 .0385 3.6 0.114 16 ...

  • Page 10

    ... STP9NK80Z - STF9NK80Z Table 10: Revision History Date Revision 18-May-2005 1 10/11 Description of Changes First Release. ...

  • Page 11

    ... All other names are the property of their respective owners Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies STP9NK80Z - STF9NK80Z 11/11 ...