STP9NK80Z STMicroelectronics, STP9NK80Z Datasheet - Page 3

• Manufacturer Part Number: STP9NK80Z
• Description: MOSFET N-CH 800V 7.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP9NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5133-5

ELECTRICAL CHARACTERISTICS (T
Table 7: On/Off
Table 8: DYNAMIC
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
t
I
I
I
I
C
SD
DS(on)
C
r(Voff)
GS(th)
C
Q
fs
d(on)
d(off)
Q
RRM
RRM
GSS
DSS
I
Q
Q
2. Pulse width limited by safe operating area.
3. C
Q
SD
t
t
t
oss
t
t
t
rss
iss
rr
rr
c
gd
r
gs
(1)
f
f
rr
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
R
(see Figure 19)
V
R
(see Figure 20)
V
V
(see Figure 22)
I
I
V
(see Figure 20)
I
V
(see Figure 20)
D
V
SD
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
DD
GS
DD
DD
G
G
DS
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 7.5 A, V
= 7.5 A, di/dt = 100A/µs
= 7.5 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
= 15 V
= ± 20V
= 10V, I
= 0V, V
= 400 V, I
= 640 V, I
= 640V, I
= 10V
= 35V, T
= 35V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
V
DS
I
D
GS
D
GS
D
j
j
GS
D
GS
D
D
= 25°C
= 150°C
= 3.75 A
= 100µA
= 3.75 A
= 0V to 640V
= 7.5 A,
= 0
= 10 V
= 3.75 A
= 7.5A,
= 10V
= 0
C
= 125 °C
GS
= 0
STP9NK80Z - STF9NK80Z
Min.
Min.
Min.
800
3
oss
when V
1900
Typ.
3.75
Typ.
Typ.
180
530
690
0.9
7.5
4.5
6.4
38
75
26
19
58
18
12
10
24
60
12
35
17
17
DS
increases from 0 to 80%
Max.
Max.
Max.
±10
4.5
1.2
7.5
1.6
50
84
30
1
Unit
Unit
Unit
µC
µC
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
3/11
V
V
S
A
A
V
A
A