STP9NK60ZD STMicroelectronics, STP9NK60ZD Datasheet - Page 4

• Manufacturer Part Number: STP9NK60ZD
• Description: MOSFET N-CH 600V 7A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP9NK60ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4387-5

Electrical characteristics
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Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
OSS eq
V
(BR)DSS
g
increases from 0 to 80% V
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
oss eq
oss
iss
rss
gs
gd
g
(1)
(2)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
V
V
V
V
V
(see Figure 17)
I
V
V
V
V
D
DS
DS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= 15 V
= 25 V, f = 1 MHz, V
= 0, V
= 10 V
= Max rating
= Max rating, T
= ± 20 V
= V
= 10 V, I
= 480 V, I
Test conditions
Test conditions
GS
DS
, I
,
STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
I
GS
D
D
D
= 0 to 480 V
D
= 100 µA
= 3.5 A
= 3.5 A
= 0
= 7 A,
C
= 125 °C
GS
= 0
Min.
Min.
600
2.5
1110
Typ.
Typ.
0.85
135
5.3
8.7
3.5
30
72
41
21
oss
when V
Max.
Max.
0.95
±10
4.5
53
50
1
D
S
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
V
V
Ω
S