STP9NK60ZD STMicroelectronics, STP9NK60ZD Datasheet - Page 5

• Manufacturer Part Number: STP9NK60ZD
• Description: MOSFET N-CH 600V 7A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP9NK60ZD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4387-5

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
t
I
I
r(Voff)
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
SD
d(on)
d(off)
RRM
RRM
GSO
I
Q
Q
SD
t
t
t
t
t
t
rr
rr
c
r
f
f
rr
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
I
I
V
(see Figure 21)
I
V
(see Figure 21)
Igs=± 1 mA (open drain)
V
R
(see Figure 16)
V
R
(see Figure 16)
SD
SD
SD
DD
DD
DD
DD
G
G
= 7 A, V
= 7 A, di/dt = 100 A/µs
= 7 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 4.7 Ω, V
= 30 V
= 30 V, T
= 300 V, I
= 480 V, I
Test conditions
Test conditions
Test conditions
GS
j
GS
GS
= 150 °C
D
D
= 0
= 3.5 A
= 7 A,
= 10 V
= 10 V
Electrical characteristics
Min.
Min.
Min
30
Typ.
Typ.
11.4
13.6
23.1
130
550
176
880
8.4
Typ
10
15
11
20
8
Max. Unit
Max Unit
Max Unit
1.6
28
7
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/16
V