MOSFET N-CH 250V 22A TO-220

STP22NS25Z

Manufacturer Part NumberSTP22NS25Z
DescriptionMOSFET N-CH 250V 22A TO-220
ManufacturerSTMicroelectronics
SeriesMESH OVERLAY™
STP22NS25Z datasheet
 

Specifications of STP22NS25Z

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs150 mOhm @ 11A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C22AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs151nC @ 10VInput Capacitance (ciss) @ Vds2400pF @ 25V
Power - Max135WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.15 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)22 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current22 A
Power Dissipation135000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Continuous Drain Current Id11ADrain Source Voltage Vds250V
On Resistance Rds(on)130mohmRds(on) Test Voltage Vgs20V
Threshold Voltage Vgs Typ3VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-6740-5
STP22NS25Z
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N-channel 250V - 0.13Ω - 22A - TO-220 / D
Zener-protected MESH OVERLAY™ Power MOSFET
General features
Type
V
DSS
STB22NS25Z
250V
STP22NS25Z
250V
100% avalanche tested
Extremely high dv/dt capability
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performance. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, makes it
suitable in coverters for lighting applications.
Applications
Switching application
Order codes
Part number
STB22NS25Z
STP22NS25Z
June 2006
STB22NS25Z - STP22NS25Z
R
I
DS(on)
D
<0.15Ω
22A
<0.15Ω
22A
Internal schematic diagram
Marking
B22NS25Z
P22NS25Z
Rev 2
3
2
1
1
D²PAK
TO-220
Package
Packaging
D²PAK
Tape & reel
TO-220
Tube
2
PAK
3
1/14
www.st.com
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STP22NS25Z Summary of contents

  • Page 1

    ... STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. Applications ■ Switching application Order codes Part number STB22NS25Z STP22NS25Z June 2006 STB22NS25Z - STP22NS25Z R I DS(on) D <0.15Ω 22A <0.15Ω 22A Internal schematic diagram Marking ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ STB22NS25Z - STP22NS25Z ...

  • Page 3

    ... STB22NS25Z - STP22NS25Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuos Drain current (continuos (1) I Drain current (pulsed Total dissipation at T TOT Derating factor V Gate source ESD(HBM-C=100pF, R=1.5KΩ) ESD(G-S) (2) dv/dt ...

  • Page 4

    ... 10V Parameter Test conditions V > D(on 11A 25V 1MHz 200V 10V GS (see Figure 13) STB22NS25Z - STP22NS25Z Min. Typ 250 GS = 125° 250µ 11A 0.13 Min. Typ. DS(on)max, 22 2400 = 0 340 GS 120 = 20A, 108 11 40 Max. Unit V 10 µA 100 µA ±10 µA ...

  • Page 5

    ... STB22NS25Z - STP22NS25Z Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off- delay time d(Voff) t Fall time f t Off-voltage rise time r(Voff) t Fall time f t Cross-over time c Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM ...

  • Page 6

    ... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/14 STB22NS25Z - STP22NS25Z Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...

  • Page 7

    ... STB22NS25Z - STP22NS25Z Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/14 ...

  • Page 8

    ... Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/14 STB22NS25Z - STP22NS25Z Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform ...

  • Page 9

    ... STB22NS25Z - STP22NS25Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

  • Page 10

    ... STB22NS25Z - STP22NS25Z inch MIN. TYP. MAX. 0.173 0.181 0.024 0.034 0.045 0.066 0.019 0.027 0.60 0.620 0.393 0.409 0.094 0.106 0.194 0.202 0.048 ...

  • Page 11

    ... STB22NS25Z - STP22NS25Z DIM PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 0.23 0.7 0.93 1.14 1.7 0.45 0.6 1.23 1.36 8.95 9. 10.4 8.5 4.88 5.28 15 15.85 1.27 1.4 1.4 1.75 2.4 3.2 0.4 0º 4º ...

  • Page 12

    ... MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.933 0.956 STB22NS25Z - STP22NS25Z REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12 ...

  • Page 13

    ... STB22NS25Z - STP22NS25Z 6 Revision history Table 9. Date 06-Jun-2006 Revision 2 New template Revision history Changes 13/14 ...

  • Page 14

    ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STB22NS25Z - STP22NS25Z ...