STP22NS25Z STMicroelectronics, STP22NS25Z Datasheet - Page 5

• Manufacturer Part Number: STP22NS25Z
• Description: MOSFET N-CH 250V 22A TO-220
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STP22NS25Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6740-5; STP22NS25Z

STB22NS25Z - STP22NS25Z
Table 6.
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
t
d(Voff)
I
r(Voff)
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
SD
d(on)
RRM
GSO
I
Q
SD
t
t
t
t
t
rr
c
r
f
f
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off- delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source zener diode
Parameter
Parameter
Parameter
I
I
V
(see Figure 17)
Igs=± 500µA (open drain)
V
R
(see Figure 12)
V
R
(see Figure 12)
V
R
(see Figure 12)
SD
SD
DD
DD
DD
clamp
G
G
G
= 22 A, V
= 22 A, di/dt = 100A/µs
= 4.7Ω V
= 4.7Ω, V
= 4.7Ω, V
= 50V, T
= 125V, I
= 125V, I
Test conditions
Test conditions
Test conditions
= 200V, I
GS
GS
j
= 150°C
D
D
GS
GS
= 11A
= 10V
= 11 A,
= 0
D
= 10V
= 10V
= 22 A,
Electrical characteristics
Min.
Min.
Min
20
3065
Typ.
Typ.
100
110
292
Typ
21
20
30
78
37
65
Max. Unit
Max Unit
Max Unit
1.6
22
88
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
5/14
V