STP22NS25Z STMicroelectronics, STP22NS25Z Datasheet - Page 7

• Manufacturer Part Number: STP22NS25Z
• Description: MOSFET N-CH 250V 22A TO-220
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STP22NS25Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6740-5; STP22NS25Z

STB22NS25Z - STP22NS25Z
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs gate-source voltage Figure 8.
Normalized gate threshold voltage
vs temperature
characteristics
Figure 10. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
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