MOSFET N-CH 40V 104A TO-262

IRL1104LPBF

Manufacturer Part NumberIRL1104LPBF
DescriptionMOSFET N-CH 40V 104A TO-262
ManufacturerInternational Rectifier
SeriesHEXFET®
IRL1104LPBF datasheet
 


Specifications of IRL1104LPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs8 mOhm @ 62A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C104AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs68nC @ 4.5VInput Capacitance (ciss) @ Vds3445pF @ 25V
Power - Max2.4WMounting TypeThrough Hole
Package / CaseTO-262-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id104ADrain Source Voltage Vds40V
On Resistance Rds(on)8mohmRds(on) Test Voltage Vgs10V
Peak Reflow Compatible (260 C)YesRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRL1104LPBF
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Logic-Level Gate Drive
Advanced Process Technology
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Surface Mount (IRL1104S)
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Low-profile through-hole (IRL1104L)
175°C Operating Temperature
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Fast Switching
Fully Avalanche Rated
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Lead-Free
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Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
Pulsed Drain Current …
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy‚…
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
Peak Diode Recovery dv/dt ƒ…
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Junction-to-Ambient(PCB Mounted,steady-state)**
θJA
www.irf.com
IRL1104SPbF
IRL1104LPbF
HEXFET
D
G
S
2
D Pak
2
Pak is
Max.
@ 10V…
104
GS
@ 10V…
74
GS
416
167
340
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
PD -95576
®
Power MOSFET
V
= 40V
DSS
R
= 0.008Ω
DS(on)
I
= 104A†
D
TO-262
Units
A
2.4
W
W
1.1
W/°C
±16
V
mJ
62
A
17
mJ
5.0
V/ns
°C
Max.
Units
0.9
40
1
07/19/04

IRL1104LPBF Summary of contents

  • Page 1

    ... Peak Diode Recovery dv/dt ƒ… dv/dt T Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case θJC R Junction-to-Ambient(PCB Mounted,steady-state)** θJA www.irf.com IRL1104SPbF IRL1104LPbF HEXFET Pak 2 Pak is Max. @ 10V… 104 GS @ 10V… 416 167 340 - 175 300 (1 ...

  • Page 2

    IRL1104S/LPbF V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ...

  • Page 3

    VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 10 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

  • Page 4

    IRL1104S/LPbF 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 ...

  • Page 5

    LIMITED BY PACKAGE 100 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE ...

  • Page 6

    IRL1104S/LPbF D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

  • Page 7

    Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFETS www.irf.com Peak Diode Recovery dv/dt ...

  • Page 8

    IRL1104S/LPbF 2 Dimensions are shown in millimeters (inches 530S WIT CODE 8024 02, 2000 ...

  • Page 9

    TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPL IRL 3103L L OT CODE 1789 19, 1997 IN ...

  • Page 10

    IRL1104S/LPbF 2 Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION ...

  • Page 11

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...