IRL1104LPBF International Rectifier, IRL1104LPBF Datasheet - Page 2

MOSFET N-CH 40V 104A TO-262

IRL1104LPBF

Manufacturer Part Number
IRL1104LPBF
Description
MOSFET N-CH 40V 104A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1104LPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
104A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 4.5V
Input Capacitance (ciss) @ Vds
3445pF @ 25V
Power - Max
2.4W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
104A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL1104LPBF
IRL1104S/LPbF

ƒ
Source-Drain Ratings and Characteristics
Notes:
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
L
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
d(on)
d(off)
f
S
on
r
SM
rr
S
fs
(BR)DSS
GS(th)
SD
iss
oss
rss
Repetitive rating; pulse width limited by
For recommended footprint and soldering techniques refer to application note #AN-994.
g
gs
gd
I
2
rr
V
T
max. junction temperature. ( See fig. 11 )
R
(BR)DSS
SD
J
DD
G
≤ 175°C
≤ 62A, di/dt ≤ 217A/µs, V
= 25Ω, I
= 15V, starting T
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
= 62A. (See Figure 12)
J
= 25°C, L = 0.18mH
Parameter
DD
≤ V
(BR)DSS
J
,
Calculated continuous current based on maximum allowable
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL1104 data and test conditions.
junction temperature;for recommended current-handling of the
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
package refer to Design Tip # 93-4
1.0
Min. Typ. Max. Units
40
53
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
3445 –––
1065 –––
0.04 –––
7.5
270
–––
––– 0.008
––– 0.012
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
257
–––
–––
–––
223
18
32
64
84
104
–––
–––
–––
250
100
–––
–––
–––
–––
–––
126
335
416
1.3
25
68
24
34
V/°C
µA
nA
nC
pF
nC
ns
W
V
V
S
V
Reference to 25°C, I
ƒ = 1.0MHz, See Fig. 5…
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „…
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
=62A
=54A
= 25°C, I
= 25°C, I
= 3.6Ω , V
= 0.4Ω, See Fig. 10 „…
= V
= 25V, I
=40V, V
= 32V, V
= 16V
= 32V
= 0V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= -16V
= 4.5V, See Fig. 6 and 13 „…
= 20V
GS
, I
D
S
F
D
D
D
GS
= 250µA
D
GS
Conditions
=62A, V
=62A
GS
= 250µA
= 62A „
= 62A…
= 52A „
= 0V
= 0V, T
= 4.5V
D
www.irf.com
GS
=1mA…
J
= 0V „
= 150°C
G
S
+L
S
D
D
)

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