IRL1104LPBF International Rectifier, IRL1104LPBF Datasheet - Page 3

MOSFET N-CH 40V 104A TO-262

IRL1104LPBF

Manufacturer Part Number
IRL1104LPBF
Description
MOSFET N-CH 40V 104A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1104LPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
104A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 4.5V
Input Capacitance (ciss) @ Vds
3445pF @ 25V
Power - Max
2.4W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
104A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL1104LPBF
www.irf.com
1000
1000
100
100
10
10
1
Fig 1. Typical Output Characteristics
1
0.1
2.0
Fig 3. Typical Transfer Characteristics
TOP
BOTTOM
V
V
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
GS
, Drain-to-Source Voltage (V)
4.0
T = 25 C
, Gate-to-Source Voltage (V)
J
1
°
2.7V
6.0
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
DS
T = 175 C
10
J
= 50V
25
8.0
°
°
10.0
100
1000
100
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0
TOP
BOTTOM
I =
D
Fig 4. Normalized On-Resistance
V
104A
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
Vs. Temperature
20 40 60 80 100 120 140 160 180
1
IRL1104S/LPbF
2.7V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100

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