IRL1104LPBF International Rectifier, IRL1104LPBF Datasheet - Page 5

• Manufacturer Part Number: IRL1104LPBF
• Description: MOSFET N-CH 40V 104A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1104LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 62A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 104A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3445pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 104A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL1104LPBF

www.irf.com
0.01
120
100
0.1
80
60
40
20
0.00001
0
Fig 9. Maximum Drain Current Vs.
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
175
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
90%
10%
V
0.01
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
d(on)
J
t
r
≤ 0.1 %
≤ 1
IRL1104S/LPbF
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
C
d(off)
t
1
t
2
t
f
+
-
1
5