IXFP10N60P IXYS, IXFP10N60P Datasheet

MOSFET N-CH 600V 10A TO-220

IXFP10N60P

Manufacturer Part Number
IXFP10N60P
Description
MOSFET N-CH 600V 10A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFP10N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
740 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5.5V @ 1mA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
1610pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.74 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
11 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
200000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
10
Rds(on), Max, Tj=25°c, (?)
0.74
Ciss, Typ, (pf)
1720
Qg, Typ, (nc)
32
Trr, Typ, (ns)
120
Trr, Max, (ns)
200
Pd, (w)
200
Rthjc, Max, (ºc/w)
0.62
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFP10N60P
Manufacturer:
IXYS
Quantity:
18 000
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
HiPerFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220)
TO-263
TO-220
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 250μA
≤ V
= 1mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
TM
, T
D25
J
GS
≤ 150°C
, Notes 1, 2
= 1MΩ
T
J
= 125°C
JM
IXFA10N60P
IXFP10N60P
-55 ... +150
-55 ... +150
Characteristic Values
600
Min.
3.0
Maximum Ratings
1.13 / 10
600
600
±30
±40
500
200
150
300
260
2.5
3.0
Typ.
10
25
10
10
±100 nA
500
740 mΩ
Nm/lb.in.
Max.
5.5
25
V/ns
mJ
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
V
I
R
t
TO-263 AA (IXFA)
TO-220AB (IXFP)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
International Standard Packages
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Rectifier
Low Q
Low R
Low Drain-to-Tab Capacitance
Low Package Inductance
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
Easy to Mount
Space Savings
DS(on)
DSS
G
DS(on)
G
D S
= 600V
= 10A
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
G
D
Tab = Drain
S
740mΩ Ω Ω Ω Ω
200ns
= Drain
D (Tab)
D (Tab)
DS99424F(04/10)

Related parts for IXFP10N60P

IXFP10N60P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved IXFA10N60P IXFP10N60P Maximum Ratings 600 = 1MΩ 600 GS ±30 ± 500 ≤ 150° 200 -55 ... +150 150 -55 ... +150 300 260 1. 2.5 3.0 Characteristic Values Min. ...

Page 2

... B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFA10N60P TO-263 Outline Max 0.62 °C/W °C/W Max TO-220 Outline 1.5 V 200 Pins Gate 3 - Source 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXFP10N60P 2 - Drain 7,157,338B2 ...

Page 3

... Value vs 125º 25º Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFA10N60P IXFP10N60P = 25º 10V Value vs 10A 100 125 150 75 100 125 150 ...

Page 4

... J 0.8 0.9 1.0 1.1 C iss C oss C rss 0. Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 300V 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1 0.1 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXFA10N60P IXFP10N60P 40ºC J 25ºC 125º 0 IXYS REF: IXF_10N60P (4J)4-18-10-D ...

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