IRF4104PBF International Rectifier, IRF4104PBF Datasheet

MOSFET N-CH 40V 75A TO-220AB

IRF4104PBF

Manufacturer Part Number
IRF4104PBF
Description
MOSFET N-CH 40V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF4104PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
140 W
Mounting Style
Through Hole
Gate Charge Qg
68 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF4104PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF4104PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF4104PBF
Quantity:
9 000
Company:
Part Number:
IRF4104PBF
Quantity:
15 886
Description
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
This HEXFET
Features
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Power MOSFET utilizes the latest
Ã
Parameter
Parameter
i
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
(Package limited)
IRF4104PbF
h
TO-220AB
G
Typ.
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
0.50
–––
–––
–––
HEXFET
10 lbf
IRF4104SPbF
S
D
-55 to + 175
y
D
Max.
in (1.1N
0.95
120
470
140
± 20
120
220
2
84
75
Pak
®
R
IRF4104SPbF
IRF4104LPbF
Power MOSFET
DS(on)
y
IRF4104PbF
V
m)
Max.
1.05
–––
DSS
62
40
I
D
= 75A
IRF4104LPbF
PD - 95468A
= 5.5mΩ
= 40V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF4104PBF Summary of contents

Page 1

... R Junction-to-Ambient θJA R Junction-to-Ambient (PCB Mount) θJA www.irf.com G TO-220AB IRF4104PbF Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package limited Parameter 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF ® HEXFET Power MOSFET 40V DSS R = 5.5mΩ DS(on 75A Pak TO-262 IRF4104SPbF IRF4104LPbF Max. Units 120 470 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 15V 20µs PULSE WIDTH 1 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 4000 C oss = Ciss 3000 2000 Coss 1000 ...

Page 5

LIMITED BY PACKAGE 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP Single Pulse BOTTOM 1% Duty Cycle 120 75A 100 ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB package is ...

Page 10

T HIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/datasheets/data/auirf4104.pdf 2. For the most current ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE : T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASSEMBLY LINE "C" Note: "P" in assembly line ...

Page 12

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; ...

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