IXFP14N60P IXYS, IXFP14N60P Datasheet

MOSFET N-CH 600V 14A TO-220

IXFP14N60P

Manufacturer Part Number
IXFP14N60P
Description
MOSFET N-CH 600V 14A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheets

Specifications of IXFP14N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.55
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
36
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFP14N60P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXFP14N60P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFP14N60P
Quantity:
484
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting Torque
Mounting Force
TO-263
TO-220
TO-247
V
V
V
V
V
V
Test Conditions
S
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
≤ I
= 25°C to 150°C
= 25°C to 150°C R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
HiperFET
, V
GS
DSS
, I
DD
D
D
D
≤ V
= 250μA
= 2.5mA
= 0.5 • I
DS
DSS
= 0V
, T
(TO-220 & TO-247)
(TO-263)
D25
GS
J
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFA14N60P
IXFP14N60P
IXFH14N60P
10..65 / 2.2..14.6
600
Min.
-55 ... +150
-55 ... +150
3.0
Characteristic Values
Maximum Ratings
1.13 / 10
± 30
± 40
600
600
900
300
150
300
260
Typ.
2.5
3.0
6.0
450
14
42
14
10
± 100 nA
500 μA
550 mΩ
Nmlb.in.
5.5
Max.
5 μA
N/lb.
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
V
I
R
t
TO-263
TO-220
TO-247
G = Gate
S = Source
Features
Advantages
Applications:
D25
rr
Avalanche rated
International standard packages
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
Easy to mount
Space savings
High power density
DS(on)
DSS
G
G
D
= 600V
= 14A
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D
S
S
G
D
TAB = Drain
550mΩ Ω Ω Ω Ω
200ns
S
= Drain
DS99389F(12/08)
(TAB)
(TAB)
(TAB)

Related parts for IXFP14N60P

IXFP14N60P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXFA14N60P IXFP14N60P IXFH14N60P Maximum Ratings 600 = 1MΩ 600 GS ± 30 ± 900 ≤ 150° 300 -55 ... +150 150 -55 ... +150 300 260 1. 10..65 / 2.2..14.6 2.5 3 ...

Page 2

... DSS D D25 12 0.50 0.21 Characteristic Values Min. Typ. JM 6.0 0.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFA14N60P IXFP14N60P IXFH14N60P TO-220 (IXFP) Outline Max Pins Gate nC nC 0.42 °C/W °C/W °C/W Max TO-247 (IXFH) Outline 42 A 1.5 ...

Page 3

... IXFA14N60P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 14A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFP14N60P IXFH14N60P Value 100 125 150 75 100 125 150 IXYS REF: F_14N60P(5J)12-22-08-G ...

Page 4

... C iss C oss C rss IXFA14N60P Fig. 8. Transconductance 40º 25ºC 125º Amperes D Fig. 10. Gate Charge 300V 10mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25º Single Pulse 1 10 100 V - Volts DS IXFP14N60P IXFH14N60P 25µs 100µs 1ms 10ms 1000 ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFA14N60P IXFP14N60P IXFH14N60P 1 IXYS REF: F_14N60P(5J)12-22-08-G 10 ...

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