IXFP14N60P IXYS, IXFP14N60P Datasheet

MOSFET N-CH 600V 14A TO-220

IXFP14N60P

Manufacturer Part Number
IXFP14N60P
Description
MOSFET N-CH 600V 14A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheets

Specifications of IXFP14N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.55
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
36
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFP14N60P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXFP14N60P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFP14N60P
Quantity:
484
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
GSS
DSS
D25
DM
AR
© 2006 IXYS All rights reserved
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GS
GSM
AR
AS
D
SOLD
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Tranisent
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
TO-220
TO-263
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 250 µA
= 4 mA
, V
= 0.5 I
G
= 4 Ω
DS
= 0
D25
(TO-3P,TO-220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXFA 14N60P
IXFH 14N60P
IXFP 14N60P
600
Min.
3.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
450
1.13/10 Nm/lb.in.
600
600
±30
±40
300
150
300
260
0.9
14
42
14
23
10
6
4
2
±100
550
Max.
5.5
50
5
V/ns
m Ω
mJ
nA
µA
µA
° C
° C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
g
J
V
I
R
TO-263 (IXFA)
TO-247 (IXFH)
TO-220 (IXFP)
Features
l
l
l
Advantages
l
l
l
D25
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
DS(on)
DSS
G = Gate
S = Source
G
G
= 600
=
≤ ≤ ≤ ≤ ≤ 550 mΩ Ω Ω Ω Ω
D
D
G
S
S
14
S
D = Drain
TAB = Drain
DS99389E(02/06)
(TAB)
A
V
(TAB)

Related parts for IXFP14N60P

IXFP14N60P Summary of contents

Page 1

... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFA 14N60P IXFH 14N60P IXFP 14N60P Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 0.9 ≤ DSS 300 -55 ... +150 150 -55 ... +150 ...

Page 2

... A, -di/dt = 100 A/µ 100 TO-263 (IXFA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. Max. ...

Page 3

... Fig. 1. Output Characteristics @ 25º Volts DS Fig. 3. Output Characteristics @ 125º Volts DS Fig Normalized to I DS(on) Drain Current 3 10V GS 2.8 2.4 2 1.6 1.2 0 Amperes D © 2006 IXYS All rights reserved 30 = 10V 3.2 = 10V GS 8V 2.8 2 1.6 1.2 0 Value vs 125º 25º - ...

Page 4

... Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.3 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 10,000 MHz 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 8 25º 0.9 1 1.1 1.2 0 Fig. 12. Forward-Bias Safe Operating Area 100 C iss ...

Page 5

... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFA 14N60P IXFP 14N60P IXFH 14N60P 1 10 ...

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