IXFP14N60P IXYS, IXFP14N60P Datasheet - Page 2

• Manufacturer Part Number: IXFP14N60P
• Description: MOSFET N-CH 600V 14A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFP14N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5.5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.55
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 36
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note 1:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
TO-263 (IXFA) Outline
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
V
V
Resistive Switching Times
V
R
V
(TO-220)
(TO-247)
V
Repetitive, pulse width limited by T
I
I
V
Test Conditions
Test Conditions
F
F
GS
R
DS
GS
G
GS
GS
= 14A, -di/dt = 100A/μs
= I
= 100V, V
= 20V, I
= 10V, V
= 10Ω (External)
= 0V, V
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 0.5 • I
DS
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
7
Min.
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
2500
Typ.
Typ.
0.50
0.21
6.0
0.6
215
13
23
27
70
26
36
16
12
13
0.42 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
200
1.5
Max.
14
42
°C/W
°C/W
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
S
A
A
V
IXFA14N60P
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXFP) Outline
TO-247 (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
Dim.
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
3 - Source
4.7
2.2
2.2
1.0
Millimeter
.4
1
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
IXFH14N60P
Max.
IXFP14N60P
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
2 - Drain
0.205
0.232
∅ P
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242 BSC
Inches
7,157,338B2
0.225
0.252
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216