MOSFET N-CH 500V 30A TO-247

IXTH30N50P

Manufacturer Part NumberIXTH30N50P
DescriptionMOSFET N-CH 500V 30A TO-247
ManufacturerIXYS
SeriesPolarHV™
IXTH30N50P datasheet
 

Specifications of IXTH30N50P

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs200 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C30AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs70nC @ 10VInput Capacitance (ciss) @ Vds4150pF @ 25V
Power - Max460WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.2 Ohms
Forward Transconductance Gfs (max / Min)27 sDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current30 A
Power Dissipation460 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)500Id(cont), Tc=25°c, (a)30
Rds(on), Max, Tj=25°c, (?)0.2Ciss, Typ, (pf)4150
Qg, Typ, (nc)70Trr, Typ, (ns)400
Pd, (w)460Rthjc, Max, (k/w)0.27
Package StyleTO-247Lead Free Status / RoHS StatusLead free / RoHS Compliant
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PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25° C to 150° C
DSS
J
V
T
= 25° C to 150° C; R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25° C
D25
C
I
T
= 25° C, pulse width limited by T
DM
C
I
T
= 25° C
AR
C
E
T
= 25° C
AR
C
E
T
= 25° C
AS
C
dv/dt
I
≤ I
, di/dt ≤ 100 A/µs, V
S
DM
≤ 150° C, R
= 5 Ω
T
J
G
P
T
= 25° C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 s
SOLD
M
Mounting torque (TO-247, TO-3P)
d
F
Mounting force (PLUS220, PLUS220SMD)
C
Weight
PLUS220, PLUS220SMD
TO-268
TO-3P
TO-247
Symbol
Test Conditions
(T
= 25° C, unless otherwise specified)
J
= 250 µA
BV
V
= 0 V, I
DSS
GS
D
= 250 µA
V
V
= V
, I
GS(th)
DS
GS
D
= ±30 V, V
I
V
= 0 V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 I
DS(on)
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
IXTH 30N50P
IXTQ 30N50P
IXTT 30N50P
IXTV 30N50P
IXTV 30N50PS
Maximum Ratings
500
= 1 MΩ
500
GS
±30
±40
30
75
JM
30
40
1.2
≤ V
,
10
DD
DSS
460
-55 ... +150
150
-55 ... +150
300
260
1.13/10 Nm/lb.in.
11 65/2.5 15 N/lb.
4
5
5.5
6
Characteristic Values
Min.
Typ. Max.
500
3.0
5.0
±100
25
T
= 125° C
250
J
165
200
V
= 500
DSS
I
=
30
D25
≤ ≤ ≤ ≤ ≤ 200 mΩ Ω Ω Ω Ω
R
DS(on)
TO-247 AD (IXTH)
TO-3P (IXTQ)
V
V
V
V
G
D
A
S
A
TO-268 (IXTT)
A
mJ
J
G
S
V/ns
(TAB)
PLUS220 (IXTV)
W
°C
°C
°C
G
D
S
°C
°C
PLUS220 SMD(IXTV..S)
g
g
G
g
S
g
G = Gate
D = Drain
S = Source
TAB = Drain
Features
V
l
International standard packages
l
Unclamped Inductive Switching (UIS)
V
rated
l
Low package inductance
nA
- easy to drive and to protect
µA
Advantages
µA
l
Easy to mount
l
Space savings
m Ω
l
High power density
DS99415E(04/06)
V
A
(TAB)
(TAB)
(TAB)
(TAB)

IXTH30N50P Summary of contents

  • Page 1

    ... V GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 1.2 ≤ ...

  • Page 2

    ... V - Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 IXTH 30N50P IXTQ 30N50P IXTT 30N50P (T = 25° C, unless otherwise specified 0 pulse test DS D D25 ...

  • Page 3

    ... I - Amperes D Fig. 7. Input Adm ittance º 125 º º - 3.5 4 4 Volts G S © 2006 IXYS All rights reserved IXTH 30N50P IXTQ 30N50P IXTT 30N50P C 3.4 3.1 2.8 2.5 2.2 6V 1.9 1.6 1 0.7 0 º 125 º ...

  • Page 4

    ... V - Volts S D Fig. 11. Capacitance 10000 1000 100 f = 1MHz Volts D S 1.00 0.10 0.01 0.1 IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 30N50P IXTQ 30N50P IXTT 30N50P 10 º 0.8 0.9 1 1.1 100 C iss 10 C oss Fig. 13. M axim um Tr ans ie nt The tance ...

  • Page 5

    ... R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC PLUS220 (IXTV) Outline © 2006 IXYS All rights reserved IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS Package Outline Drawings TO-3P (IXTQ) Outline PLUS220SMD (IXTV_S) Outline TO-268 (IXTT) Outline ...