IXTH30N50P IXYS, IXTH30N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH30N50P
Manufacturer Part Number
IXTH30N50P
Description
MOSFET N-CH 500V 30A TO-247
Specifications of IXTH30N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
4150pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
27 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
460 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.2
Ciss, Typ, (pf)
4150
Qg, Typ, (nc)
70
Trr, Typ, (ns)
400
Pd, (w)
460
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
C
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
Mounting force (PLUS220, PLUS220SMD)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-268
TO-3P
PLUS220, PLUS220SMD
TO-247
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
= 0 V, I
= ±30 V, V
= V
= 10 V, I
= V
TM
= 0 V
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
D
= 250 µA
= 250 µA
= 0.5 I
DS
G
= 5 Ω
= 0 V
D25
GS
= 1 MΩ
DD
Characteristic Values
T
Min.
J
= 125° C
≤ V
DSS
IXTH 30N50P
IXTQ 30N50P
IXTT 30N50P
IXTV 30N50P
IXTV 30N50PS
JM
Typ. Max.
,
500
3.0
-55 ... +150
-55 ... +150
11 65/2.5 15 N/lb.
Maximum Ratings
165
1.13/10 Nm/lb.in.
500
500
±30
±40
460
150
300
260
1.2
30
75
30
40
10
5.5
4
6
5
5.0
±100
25
250
200
V/ns
m Ω
nA
µA
µA
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
g
g
J
TO-247 AD (IXTH)
TO-3P (IXTQ)
TO-268 (IXTT)
PLUS220 SMD(IXTV..S)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
PLUS220 (IXTV)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G
DS(on)
DSS
D
G
S
D
S
G
≤ ≤ ≤ ≤ ≤ 200 mΩ Ω Ω Ω Ω
= 500
=
G
D = Drain
TAB = Drain
S
S
30
DS99415E(04/06)
(TAB)
(TAB)
(TAB)
(TAB)
(TAB)
A
V
Related parts for IXTH30N50P
IXTH30N50P Summary of contents
... V GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 1.2 ≤ ...
... V - Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 IXTH 30N50P IXTQ 30N50P IXTT 30N50P (T = 25° C, unless otherwise specified 0 pulse test DS D D25 ...
... I - Amperes D Fig. 7. Input Adm ittance º 125 º º - 3.5 4 4 Volts G S © 2006 IXYS All rights reserved IXTH 30N50P IXTQ 30N50P IXTT 30N50P C 3.4 3.1 2.8 2.5 2.2 6V 1.9 1.6 1 0.7 0 º 125 º ...
... V - Volts S D Fig. 11. Capacitance 10000 1000 100 f = 1MHz Volts D S 1.00 0.10 0.01 0.1 IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 30N50P IXTQ 30N50P IXTT 30N50P 10 º 0.8 0.9 1 1.1 100 C iss 10 C oss Fig. 13. M axim um Tr ans ie nt The tance ...
... R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC PLUS220 (IXTV) Outline © 2006 IXYS All rights reserved IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS Package Outline Drawings TO-3P (IXTQ) Outline PLUS220SMD (IXTV_S) Outline TO-268 (IXTT) Outline ...
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