IXTH30N50P IXYS, IXTH30N50P Datasheet - Page 3

MOSFET N-CH 500V 30A TO-247

IXTH30N50P

Manufacturer Part Number
IXTH30N50P
Description
MOSFET N-CH 500V 30A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXTH30N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
4150pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
27 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
460 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.2
Ciss, Typ, (pf)
4150
Qg, Typ, (nc)
70
Trr, Typ, (ns)
400
Pd, (w)
460
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH30N50P
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTH30N50P
Manufacturer:
IXYS
Quantity:
18 000
© 2006 IXYS All rights reserved
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
30
27
24
21
18
15
12
55
50
45
40
35
30
25
20
15
10
9
6
3
0
1
5
0
3.5
0
0
V
GS
10
4
Fig. 3. Output Characteristics
2
Fig. 5. R
= 10V
Fig. 7. Input Adm ittance
20
4.5
0.5 I
T
4
J
= 125
DS(on)
I
D25
V
30
-40
D
V
25
5
G S
@ 125
V
D S
- Amperes
º
º
GS
6
º
Value vs. I
C
C
C
- Volts
Norm alized to
40
5.5
- Volts
= 10V
8V
7V
º
C
8
T
50
6
J
6V
5V
= 125
D
10
T
J
6.5
60
= 25
º
C
12
º
70
C
7
7.5
14
80
IXTH 30N50P IXTQ 30N50P IXTT 30N50P
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
5
0
1
5
0
-50
-50
0
T
Fig. 4. R
V
J
Value vs. Junction Tem perature
IXTV 30N50P IXTV 30N50PS
5
GS
= -40
-25
-25
125
Fig. 6. Drain Current vs. Case
Fig. 8. Transconductance
25
= 10V
10
º
º
º
C
C
C
T
0
0
DS(on
T
15
C
J
- Degrees Centigrade
- Degrees Centigrade
Tem perature
20
25
I
)
25
Norm alized to 0.5 I
D
I
- Amperes
D
25
= 30A
50
50
30
75
75
35
I
D
40
100
100
= 15A
45
D25
125
125
50
150
150
55

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