IXTH30N50P IXYS, IXTH30N50P Datasheet - Page 4

• Manufacturer Part Number: IXTH30N50P
• Description: MOSFET N-CH 500V 30A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTH30N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 4150pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 27 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.2
• Ciss, Typ, (pf): 4150
• Qg, Typ, (nc): 70
• Trr, Typ, (ns): 400
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
10
90
80
70
60
50
40
30
20
10
0
0.4
0
f = 1MHz
5
0.5
1.00
0.10
0.01
Fig. 11. Capacitance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
10
0.1
T
0.6
J
= 125
15
V
V
S D
º
0.7
D S
C
- Volts
20
- Volts
0.8
C iss
C oss
C rs
25
Fig. 13. M axim um Tr ans ie nt The r m al Re s is tance
T
0.9
J
1
30
= 25
º
C
1
35
Pulse Width - milliseconds
1.1
40
IXTH 30N50P IXTQ 30N50P IXTT 30N50P
10
100
10
10
9
8
7
6
5
4
3
2
1
0
1
10
0
R
T
T
V
I
I
IXTV 30N50P IXTV 30N50PS
D
G
J
C
DS(on)
DS
= 15A
= 10mA
= 150ºC
10
= 25ºC
= 250V
Fig. 10. Gate Charge
Limit
Fig. 12. Forw ard-Bias
Safe Operating Area
20
Q
100
G
- nanoCoulombs
V
30
D S
DC
100
- Volts
40
50
1000
60
100µs
1ms
10ms
25µs
1000
70