MOSFET N-CH 1500V 2.5A TO-220

STP3N150

Manufacturer Part NumberSTP3N150
DescriptionMOSFET N-CH 1500V 2.5A TO-220
ManufacturerSTMicroelectronics
SeriesPowerMESH™
STP3N150 datasheet
 

Specifications of STP3N150

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs9 Ohm @ 1.3A, 10VDrain To Source Voltage (vdss)1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C2.5AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs29.3nC @ 10VInput Capacitance (ciss) @ Vds939pF @ 25V
Power - Max140WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)9 Ohm @ 10 V
Drain-source Breakdown Voltage1500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current2.5 APower Dissipation140000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 50 CContinuous Drain Current Id2.5A
Drain Source Voltage Vds1.5kVOn Resistance Rds(on)9ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-6327-5  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
14
15
Page 1/15

Download datasheet (760Kb)Embed
Next
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
Features
R
DS(on)
Type
V
DSS
max.
< 9 Ω
STFW3N150
1500 V
< 9 Ω
STP3N150
1500 V
< 9 Ω
STW3N150
1500 V
100% avalanche tested
Intrinsic capacitances and Q
High speed switching
Fully isolated TO-3PF plastic package
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
Switching applications
Description
Using the well consolidated high voltage MESH
TM
OVERLAY
process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest R
per area, unrivalled gate
DS(on)
charge and switching characteristics.
Table 1.
Device summary
Order codes
STFW3N150
STP3N150
STW3N150
June 2010
STP3N150, STW3N150
in TO-220, TO-247, TO-3PF
I
P
D
TOT
2.5 A
63 W
2.5 A
140 W
2.5 A
140 W
minimized
g
Figure 1.
Marking
3N150
3N150
3N150
Doc ID 13102 Rev 9
STFW3N150
3
2
1
TO-220
3
2
1
TO-247
TO-3PF
Internal schematic diagram
Package
Packaging
TO-3PF
Tube
TO-220
Tube
TO-247
Tube
3
2
1
1/15
www.st.com
15

STP3N150 Summary of contents

  • Page 1

    ... The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest R per area, unrivalled gate DS(on) charge and switching characteristics. Table 1. Device summary Order codes STFW3N150 STP3N150 STW3N150 June 2010 STP3N150, STW3N150 in TO-220, TO-247, TO-3PF TOT 2 2.5 A 140 W 2.5 A 140 W minimized g Figure 1 ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/ Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

  • Page 3

    ... STFW3N150, STP3N150, STW3N150 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Insulation withstand voltage (RMS) from all three leads to external heat sink V ISO (t=1 s ...

  • Page 4

    ... Parameter Test conditions MHz 1200 f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain V = 1200 (see Figure 19) DSS Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 Min. Typ 1500 =125 ° 250 µ 1 Min. Typ 2.6 939 = 0 - 102 GS 13 100 2 4.6 ...

  • Page 5

    ... STFW3N150, STP3N150, STW3N150 Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

  • Page 6

    ... Safe operating area for TO-247 6/15 Figure 3. AM03934v1 K δ=0.5 0.2 0.1 10µ 100µs 1ms 10ms Single pulse - (V) 1000 DS 10 Figure 5. Figure 7. Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 Thermal impedance for TO-3PF TO3PF 0.05 0. Thermal impedance for TO-220 Thermal impedance for TO-247 ...

  • Page 7

    ... STFW3N150, STP3N150, STW3N150 Figure 8. Output characteristics Figure 10. Normalized BV DSS Figure 12. Gate charge vs. gate-source voltage Figure 9. vs. temperature Figure 11. Static drain-source on resistance Figure 13. Capacitance variations Doc ID 13102 Rev 9 Electrical characteristics Transfer characteristics 7/15 ...

  • Page 8

    ... Electrical characteristics Figure 14. Normalized gate threshold voltage vs. temperature Figure 16. Source-drain diode forward characteristics 8/15 STFW3N150, STP3N150, STW3N150 Figure 15. Normalized on resistance vs. temperature Figure 17. Maximum avalanche energy vs Tj Doc ID 13102 Rev 9 ...

  • Page 9

    ... STFW3N150, STP3N150, STW3N150 3 Test circuits Figure 18. Switching times test circuit for resistive load D.U. Figure 20. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 22. Unclamped inductive waveform Figure 19. Gate charge test circuit 3.3 2200 µ ...

  • Page 10

    ... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/15 STFW3N150, STP3N150, STW3N150 Doc ID 13102 Rev 9 ® ...

  • Page 11

    ... STFW3N150, STP3N150, STW3N150 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2 ...

  • Page 12

    ... S 12/15 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

  • Page 13

    ... STFW3N150, STP3N150, STW3N150 DIM Dia TO-3PF mechanical data mm. min. typ 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 5.45 15.30 9.80 10 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 Doc ID 13102 Rev 9 Package mechanical data max. 5.70 3.20 3.50 2.20 1 ...

  • Page 14

    ... TO-3PF TOT – Document status promoted from preliminary data to datasheet 7 – Removed TO-220FH package and mechanical data 8 Corrected V value in ISO Table 3. 9 Corrected unit in Doc ID 13102 Rev 9 STFW3N150, STP3N150, STW3N150 Changes Table 6. Figure 15 (Table 2: Absolute maximum Table 2: Absolute maximum ratings ratings) ...

  • Page 15

    ... STFW3N150, STP3N150, STW3N150 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...