STP3N150 STMicroelectronics, STP3N150 Datasheet - Page 14

• Manufacturer Part Number: STP3N150
• Description: MOSFET N-CH 1500V 2.5A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STP3N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 29.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 939pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 140000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 50 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 9ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6327-5

Revision history
5
14/15
Revision history
Table 9.
14-May-2007
29-Aug-2007
01-Dec-2009
10-Dec-2009
13-Feb-2009
12-Jan-2007
17-Apr-2007
09-Apr-2008
29-Jun-2010
Date
Document revision history
Revision
1
2
3
4
5
6
7
8
9
Added new value on
Added new package: TO-3PF
Added P
First release
The document has been reformatted
R
– Document status promoted from preliminary data to datasheet
– Removed TO-220FH package and mechanical data
Corrected V
Corrected unit in
Doc ID 13102 Rev 9
DS(on)
value changed, updated
TOT
ISO
value for TO-3PF
value in
Table 3.
Table 6.
Table 2: Absolute maximum ratings
STFW3N150, STP3N150, STW3N150
Changes
(Table 2: Absolute maximum
Figure 15
ratings)