STP3N150 STMicroelectronics, STP3N150 Datasheet - Page 7

MOSFET N-CH 1500V 2.5A TO-220

STP3N150

Manufacturer Part Number
STP3N150
Description
MOSFET N-CH 1500V 2.5A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STP3N150

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
29.3nC @ 10V
Input Capacitance (ciss) @ Vds
939pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 Ohm @ 10 V
Drain-source Breakdown Voltage
1500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
140000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 50 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
9ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6327-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP3N150
Manufacturer:
ON
Quantity:
9 000
Part Number:
STP3N150
Manufacturer:
ST
Quantity:
200
Company:
Part Number:
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Quantity:
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Part Number:
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STFW3N150, STP3N150, STW3N150
Figure 8.
Figure 10. Normalized BV
Figure 12. Gate charge vs. gate-source
Output characteristics
voltage
DSS
vs. temperature Figure 11. Static drain-source on resistance
Doc ID 13102 Rev 9
Figure 9.
Figure 13. Capacitance variations
Transfer characteristics
Electrical characteristics
7/15

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