STP3N150 STMicroelectronics, STP3N150 Datasheet - Page 9

MOSFET N-CH 1500V 2.5A TO-220

STP3N150

Manufacturer Part Number
STP3N150
Description
MOSFET N-CH 1500V 2.5A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STP3N150

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
29.3nC @ 10V
Input Capacitance (ciss) @ Vds
939pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 Ohm @ 10 V
Drain-source Breakdown Voltage
1500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
140000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 50 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
9ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6327-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP3N150
Manufacturer:
ON
Quantity:
9 000
Part Number:
STP3N150
Manufacturer:
ST
Quantity:
200
Company:
Part Number:
STP3N150
Quantity:
1 000
Part Number:
STP3N150N
Manufacturer:
ST
Quantity:
20 000
STFW3N150, STP3N150, STW3N150
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
Doc ID 13102 Rev 9
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
µF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
off
t
off
Test circuits
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
9/15
G
DD
DD

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