IXTH30N60P IXYS, IXTH30N60P Datasheet - Page 2

• Manufacturer Part Number: IXTH30N60P
• Description: MOSFET N-CH 600V 30A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTH30N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 5050pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohms
• Forward Transconductance Gfs (max / Min): 25 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 5050
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): 500
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
30
27
24
21
18
15
12
9
6
3
0
0
1
Fig. 1. Output Characteristics
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
2
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
V
3
4,850,072
4,881,106
D S
V
@ 25
GS
- Volts
= 10V
4
8V
7V
º
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
C
F
F
4,931,844
5,017,508
5,034,796
DS
GS
GS
GS
GS
R
G
= I
= 25A, -di/dt = 100 A/µs
5
= 100V
= 0 V
= 20 V; I
= 10 V, V
= 4 Ω (External)
= 10 V, V
S
= 0 V, V
, V
6.5V
6V
5.5V
5V
6
GS
5,049,961
5,063,307
5,187,117
= 0 V,
D
7
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0.5 I
= 0.5 V
8
5,237,481
5,381,025
5,486,715
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
D25
D25
, pulse test
DSS
, I
6,162,665
6,259,123 B1
6,306,728 B1
D
(T
(T
= 0.5 I
60
55
50
45
40
35
30
25
20
15
10
J
J
5
0
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
Fig. 2. Extended Output Characteristics
0
D25
3
6,404,065 B1
6,534,343
6,583,505
IXTV 30N60P IXTV 30N60PS
V
6
Min.
Min.
GS
22
Characteristic Values
Characteristic Values
= 10V
9
8V
7V
5050
Typ. Max.
Typ. Max.
0.21
12
500
@ 25
V
6,683,344
6,710,405B2
6,710,463
540
4.0
25
53
29
20
80
25
82
28
30
D S
15
- Volts
º
C
0.23 ° C/W
6.5V
1.5
6V
5.5V
5V
18
30
80
6,727,585
6,759,692
6,771,478 B2
° C/W
21
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
24
27
30