IXFH12N100F IXYS, IXFH12N100F Datasheet
IXFH12N100F
Manufacturer Part Number
IXFH12N100F
Description
MOSFET N-CH 1000V 12A TO-247AD
Manufacturer
IXYS
Series
HiPerRF™r
Datasheet
1.IXFH12N100F.pdf
(2 pages)
Specifications of IXFH12N100F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
77nC @ 10V
Input Capacitance (ciss) @ Vds
2700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.05 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH12N100F
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH12N100F
Manufacturer:
FSC
Quantity:
30 000
Part Number:
IXFH12N100F
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Intrinsic R
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2003 IXYS CORPORATION, All Rights Reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
g
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
, High dV/dt, Low t
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
J
C
TM
GS
DS
GS
DS
GS
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
DM
, di/dt < 100A/μs, V
GS
DSS
, I
D
D
D
= 1mA
= 4mA
G
= 0.5 • I
DS
= 2Ω
= 0V
g
, Low
D25
GS
rr
, Note 1
= 1MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXFH12N100F
IXFT12N100F
1000
3.0
-55 ... +150
-55 ... +150
Min.
Characteristic Values
Maximum Ratings
1.13/10
1000
1000
± 20
± 30
300
150
300
260
12
48
12
Typ.
20
1
4
6
± 100 nA
1.05
Max.
Nm/lb.in.
5.5
1.5 mA
50
V/ns
μA
°C
°C
°C
°C
°C
W
g
Ω
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
Features
Applications
Advantages
TO-247 (IXFH)
TO-268 (IXFT)
G = Gate
S = Source
D25
rr
RF amplifiers
RF capable MOSFETs
Double metal process for low gate
resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
13.5 MHz industrial applications
Pulse generation
Laser drivers
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Space savings
High power density
DSS
DS(on)
G
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D
TAB = Drain
1000V
= Drain
12A
1.05Ω Ω Ω Ω Ω
250ns
DS98856A(01/03)
TAB
TAB
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IXFH12N100F Summary of contents
Page 1
... I = 4mA GS(th ± 20V GSS DSS DS DSS 10V 0.5 • I DS(on © 2003 IXYS CORPORATION, All Rights Reserved IXFH12N100F IXFT12N100F rr Maximum Ratings 1000 = 1MΩ 1000 GS ± 20 ± ≤ DSS 300 -55 ... +150 150 -55 ... +150 300 260 1.13/ Characteristic Values Min. Typ. ...
Page 2
... DSS D D25 0.5 • DSS D D25 42 0.21 Characteristic Values Min. Typ. JM 0.8 7.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH12N100F IXFT12N100F Max. TO-247 (IXFH) Outline Dim. Millimeter nC Min. Max 4.7 A 2 1.0 0.42 °C ...