IXTT20P50P IXYS, IXTT20P50P Datasheet - Page 3

• Manufacturer Part Number: IXTT20P50P
• Description: MOSFET P-CH 500V 20A TO-268
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTT20P50P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 5120pF @ 25V
• Power - Max: 460W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vdss, Max, (v): -500.0
• Id(cont), Tc=25°c, (a): -20.0
• Rds(on), Max, Tj=25°c, (?): 0.450
• Ciss, Typ, (pf): 5120
• Qg, Typ, (nc): 103
• Trr, Typ, (ns): 406
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
-20
-18
-16
-14
-12
-10
-20
-18
-16
-14
-12
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-8
-6
-4
-2
-8
-6
-4
-2
0
0
0
0
0
Fig. 5. R
V
-5
-2
-1
GS
= -10V
-10
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
-2
-4
DS(on)
-15
-6
-3
Drain Current
Normalized to I
-20
I
D
V
@ 125ºC
V
@ 25ºC
-8
-4
DS
- Amperes
DS
-25
- Volts
- Volts
-10
-5
V
V
GS
-30
GS
= -10V
= -10V
-12
-6
- 7V
T
-35
- 7V
J
- 6V
- 5V
D
= 125ºC
- 6V
- 5V
= -10A vs.
-14
-7
-40
T
J
= 25ºC
-16
-8
-45
-18
-50
-9
-50
-45
-40
-35
-30
-25
-20
-15
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-22
-20
-18
-16
-14
-12
-10
-5
-8
-6
-4
-2
0
0
-50
-50
0
V
Fig. 4. R
Fig. 2. Extended Output Characteristics
-3
GS
-25
-25
= -10V
Fig. 6. Maximum Drain Current vs.
-6
0
0
DS(on)
Junction Temperature
T
-9
J
T
Case Temperature
- Degrees Centigrade
J
- Degrees Centigrade
25
25
Normalized to I
-12
@ 25ºC
V
DS
-15
50
50
- Volts
I
V
D
GS
= - 20A
-18
= -10V
75
75
- 7V
- 6V
- 5V
IXTH20P50P
IXTT20P50P
-21
D
= -10A vs.
100
100
-24
I
IXYS REF: T_20P50P(B7) 5-13-08
D
= -10A
125
125
-27
150
150
-30