IXTH50N20 IXYS, IXTH50N20 Datasheet
IXTH50N20
Specifications of IXTH50N20
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IXTH50N20 Summary of contents
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... V DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXTH 50N20 IXTM 50N20 Maximum Ratings 200 = 1 M 200 200 JM 300 -55 ... +150 150 -55 ...
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... I 35 DSS D D25 95 0.42 0.25 Characteristic Values ( unless otherwise specified) J min. typ. 50N20 JM = 100 V 400 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTH 50N20 IXTM 50N20 TO-247 AD (IXTH) Outline max ...
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... J 100 10V 100 125 150 175 200 I - Amperes D Fig. 5 Drain Current vs. Case Temperature 50N20 50 40 42N20 -50 - Degrees C C © 2000 IXYS All rights reserved 100 V = 10V 2.50 2.25 2.00 1.75 1.50 1. 15V GS 1.00 0.75 1.2 1.1 1.0 0.9 0.8 ...
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... V - Volts DS Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved Fig.8 Forward Bias Safe Operating Area 100 Limited Fig.10 Source Current vs. Source 0.2 0.001 0.01 Time - Seconds ...