IXTR20P50P IXYS, IXTR20P50P Datasheet

MOSFET P-CH 500V 13A ISOPLUS247

IXTR20P50P

Manufacturer Part Number
IXTR20P50P
Description
MOSFET P-CH 500V 13A ISOPLUS247
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTR20P50P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
490 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
103nC @ 10V
Input Capacitance (ciss) @ Vds
5120pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vdss, Max, (v)
-500.0
Id(cont), Tc=25°c, (a)
-13.0
Rds(on), Max, Tj=25°c, (?)
0.490
Ciss, Typ, (pf)
5120
Qg, Typ, (nc)
103
Trr, Typ, (ns)
406
Pd, (w)
190
Rthjc, Max, (k/w)
0.66
Package Style
ISOPLUAS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I
Mounting force
V
V
V
V
V
V
Test Conditions
S
ISOL
TM
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
D
= - 250μA
D
≤ V
= - 250μA
DS
= -10A, Note 1
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
Preliminary Technical Information
T
J
JM
= 125°C
IXTR20P50P
20..120 / 4.5..27
t = 1min 2500
t = 1s
-55 ... +150
-55 ... +150
- 500
- 2.5
Maximum Ratings
Characteristic Values
Min.
- 500
- 500
3000
- 60
- 20
±20
±30
190
150
300
260
-13
2.5
10
5
Typ.
- 200 μA
±100 nA
- 4.5
- 25 μA
490 mΩ
Max.
N/lb.
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
Features
Applications
ISOPLUS247 (IXTR)
G = Gate
S = Source
D25
Silicon chip on Direct-Copper Bond
(DCB) substrate
Avalanche rated
The rugged PolarP
Low Q
Low Drain-to-Tab capacitance
Low package inductance
- easy to drive and to protect
High side switching
Push-pull amplifiers
DC Choppers
Automatic test equipment
Load-Switch Application
Fuel Injection Systems
DS(on)
DSS
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
E153432
G
≤ ≤ ≤ ≤ ≤
= - 500V
= - 13A
D = Drain
490mΩ Ω Ω Ω Ω
TM
Isolated Tab
process
DS99983(5/08)

Related parts for IXTR20P50P

IXTR20P50P Summary of contents

Page 1

... GSS DSS DS DSS -10V -10A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTR20P50P Maximum Ratings - 500 = 1MΩ - 500 GS ±20 ±30 - 2.5 ≤ 150° 190 -55 ... +150 150 -55 ... +150 300 260 t = 1min 2500 3000 20..120 / 4.5..27 ...

Page 2

... DSS D 34 103 , I = -10A 28 DSS D 38 0.15 Characteristic Values Min. Typ. JM 406 8. 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTR20P50P Max. ISOPLUS247 (IXTR) Outline 0.66 °C/W °C/W Max 2 μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 ...

Page 3

... D -14 -13 - 125ºC J -11 - 25º -30 -35 -40 -45 -50 IXTR20P50P Fig. 2. Extended Output Characteristics @ 25º -10V -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 20A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... T = 25º -2.5 -3.0 -3.5 - 100.0 C iss - 10.0 C oss - 1.0 C rss - 0 -25 -30 -35 -40 IXTR20P50P Fig. 8. Transconductance -5 -10 -15 -20 - Amperes D Fig. 10. Gate Charge V = -250V 10A -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on 150º 25ºC C Single Pulse ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTR20P50P 0.1 1 IXYS REF: T_20P50P(B7) 5-13-08 10 ...

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