IXTR20P50P IXYS, IXTR20P50P Datasheet - Page 4

• Manufacturer Part Number: IXTR20P50P
• Description: MOSFET P-CH 500V 13A ISOPLUS247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTR20P50P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 490 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 5120pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Vdss, Max, (v): -500.0
• Id(cont), Tc=25°c, (a): -13.0
• Rds(on), Max, Tj=25°c, (?): 0.490
• Ciss, Typ, (pf): 5120
• Qg, Typ, (nc): 103
• Trr, Typ, (ns): 406
• Pd, (w): 190
• Rthjc, Max, (k/w): 0.66
• Package Style: ISOPLUAS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
-35
-30
-25
-20
-15
-10
100
-60
-50
-40
-30
-20
-10
-5
10
0
0
-3.0
-0.5
0
f
= 1 MHz
-5
-3.5
-1.0
Fig. 9. Forward Voltage Drop of
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
-4.0
-1.5
T
Intrinsic Diode
J
-15
= 125ºC
T
J
V
V
V
= 125ºC
GS
SD
DS
- 40ºC
-4.5
25ºC
-2.0
- Volts
-20
- Volts
- Volts
-25
-5.0
-2.5
T
J
= 25ºC
C rss
C iss
C oss
-30
-5.5
-3.0
-35
-6.0
-3.5
-40
-
100.0
-
-
10.0
-
-10
1.0
0.1
40
35
30
25
20
15
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
5
0
0
-
10
0
0
T
T
Single Pulse
R
J
C
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
10
= 150ºC
V
I
I
= 25ºC
D
G
DS
= - 10A
= -1mA
-5
= -250V
Limit
20
Fig. 8. Transconductance
30
-10
Fig. 10. Gate Charge
Q
40
G
- NanoCoulombs
I
-15
D
V
- Amperes
50
DS
-
100
- Volts
IXTR20P50P
60
-20
DC
70
-25
80
T
J
= - 40ºC
125ºC
90
25ºC
-30
100µs
1ms
10ms
100ms
100
-
1000
110
-35