IXFX210N17T IXYS, IXFX210N17T Datasheet

MOSFET N-CH 210A 170V PLUS247

IXFX210N17T

Manufacturer Part Number
IXFX210N17T
Description
MOSFET N-CH 210A 170V PLUS247
Manufacturer
IXYS
Series
GigaMOS™r
Datasheet

Specifications of IXFX210N17T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
170V
Current - Continuous Drain (id) @ 25° C
210A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
285nC @ 10V
Input Capacitance (ciss) @ Vds
18800pF @ 25V
Power - Max
1150W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
170
Id(cont), Tc=25°c, (a)
210
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
18800
Qg, Typ, (nc)
285
Trr, Typ, (ns)
-
Trr, Max, (ns)
-
Pd, (w)
1150
Rthjc, Max, (k/w)
0.13
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GigaMOS
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
P
dV/dt
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
L(RMS)
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
External Lead Current Limit
T
T
T
T
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ I
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 4mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
(PLUS247)
, T
J
GS
≤ 175°C
= 1MΩ
Advance Technical Information
T
J
= 150°C
JM
IXFK210N17T
IXFX210N17T
20..120 /4.5..27
170
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13/10
1150
± 20
± 30
Typ.
170
170
210
160
580
100
175
300
260
20
10
2
6
± 200
Nm/lb.in.
Max.
5.0
7.5 mΩ
50
3
N/lb.
V/ns
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
V
I
R
t
TO-264 (IXFK)
PLUS247 (IXFX)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
Synchronous Recification
DS(on)
DSS
G
D
DS(on)
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D
TAB
170V
210A
7.5mΩ Ω Ω Ω Ω
200ns
= Drain
= Drain
(TAB)
(TAB)
DS100138(03/09)

Related parts for IXFX210N17T

IXFX210N17T Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFK210N17T IXFX210N17T Maximum Ratings 170 = 1MΩ 170 GS ± 20 ± 30 210 160 580 JM 100 2 1150 ≤ 175° -55 ... +175 175 -55 ... +175 300 260 1.13/10 20 ...

Page 2

... BSC L 19.81 L1 3.81 Q 5.59 R 4.32 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXFK210N17T IXFX210N17T Inches Max. Min. Max. 5.13 .190 .202 2.89 .100 .114 2.10 .079 .083 1.42 .044 .056 2.69 .094 .106 3.09 .114 ...

Page 3

... I 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature External Lead Current Limit -50 - Degrees Centigrade C IXFK210N17T IXFX210N17T 105A Value D = 210A 105A D 100 125 150 175 100 125 150 175 IXYS REF:F_210N17T(9W)4-02-09 ...

Page 4

... Fig. 10. Gate Charge 85V 105A 10mA 100 125 150 175 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) 100 175º 25ºC C Single Pulse Volts DS IXFK210N17T IXFX210N17T 175 200 225 250 200 225 250 275 300 25µs 100µs 1ms 100 1000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFK210N17T IXFX210N17T 0.1 1 IXYS REF:F_210N17T(9W)4-02-09 10 ...

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