IXFT24N90P IXYS, IXFT24N90P Datasheet

MOSFET N-CH TO-268

IXFT24N90P

Manufacturer Part Number
IXFT24N90P
Description
MOSFET N-CH TO-268
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFT24N90P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
420 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
7200pF @ 25V
Power - Max
660W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
420 mOhms
Forward Transconductance Gfs (max / Min)
16 S
Drain-source Breakdown Voltage
900 V
Continuous Drain Current
24 A
Power Dissipation
660 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
130 nC
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.42
Ciss, Typ, (pf)
7200
Qg, Typ, (nc)
130
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
660
Rthjc, Max, (ºc/w)
0.19
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 1mA
= 1mA
= 0.5 • I
≤ V
DS
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXFH24N90P
IXFT24N90P
900
-55 ... +150
-55 ... +150
Min.
3.5
Characteristic Values
Maximum Ratings
1.13/10
± 30
± 40
900
900
660
150
300
260
Typ.
24
48
12
15
1
6
4
± 200
Max.
420 mΩ
Nm/lb.in.
6.5
25
2 mA
V/ns
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
g
V
V
J
g
V
I
R
t
TO-247 (IXFH)
TO-268 (IXFT)
Features
Advantages
Applications:
G = Gate
S = Source
D25
rr
International standard packages
Avalanche Rated
Low package inductance
Fast intrinsic diode
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls
Easy to mount
Space savings
High power density
DS(on)
DSS
G
= 900V
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
= 24A
S
D
TAB = Drain
420mΩ Ω Ω Ω Ω
300ns
= Drain
DS100059(10/08)
TAB
TAB

Related parts for IXFT24N90P

IXFT24N90P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFH24N90P IXFT24N90P Maximum Ratings 900 = 1MΩ 900 GS ± 30 ± ≤ 150° 660 -55 ... +150 150 -55 ... +150 300 260 1.13/ Characteristic Values Min. ...

Page 2

... Max TO-268 Outline 96 A 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXFH24N90P IXFT24N90P ∅ Inches Min. Max. 5.3 .185 .209 .087 .102 2.6 .059 .098 1.4 .040 .055 .065 .084 .113 .123 .8 .016 ...

Page 3

... Value 125º 25º Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 24A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFH24N90P IXFT24N90P 12A Value 12A D 100 125 150 100 125 150 ...

Page 4

... C oss C rss 0. Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 450V 12A 10mA 100 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXFH24N90P IXFT24N90P = - 40ºC J 25ºC 125ºC 120 140 160 180 1 10 IXYS REF: F_24N90P (85)10-23-08 ...

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