IXFH14N100Q2 IXYS, IXFH14N100Q2 Datasheet

MOSFET N-CH 1000V 14A TO-247AD

IXFH14N100Q2

Manufacturer Part Number
IXFH14N100Q2
Description
MOSFET N-CH 1000V 14A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH14N100Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
83nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.95
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
83
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH14N100Q2
Manufacturer:
IXYS
Quantity:
15 500
HiPerFET
Power MOSFETs
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Low intrinsic R
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
DM
A
GSS
DSS
© 2008 IXYS CORPORATION, All rights reserved
J
L
DGR
GSS
GSM
AS
D
JM
stg
DSS
DSS
GS(th)
d
DS(on)
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.063 in) from case for 10s
Mounting torque
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
TM
g
, low t
DM
DSS
, V
GS
, I
DD
D
D
D
= 250μA
= 4mA
≤ V
rr
= 0.5 • I
DS
DSS
= 0V
, T
D25,
J
GS
≤ 150°C
= 1MΩ
Note 1
Preliminary Technical Information
T
J
= 125°C
g
JM
IXFH14N100Q2
Characteristic Values
1000
-55 ... +150
-55 ... +150
Min.
3.0
Maximum Ratings
1.13/10
1000
1000
150
500
300
±30
±40
Typ.
2.5
14
56
14
20
6
±200
Nm/lb.in.
950
Max.
5.5
25
1 mA
V/ns
μA
nA
°C
°C
°C
°C
W
g
J
V
V
V
V
A
A
A
V
V
V
I
R
t
TO-247 (IXFH)
G = Gate
S = Source
Features
Applications
Advantages
D25
rr
resistance
Double metal process for low gate
International standard package
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Easy to mount
Space savings
High power density
DSS
DS(on)
G
D
≤ ≤ ≤ ≤ ≤
= 1000V
= 14A
≤ ≤ ≤ ≤ ≤ 950mΩ Ω Ω Ω Ω
S
300ns
D
TAB = Drain
DS99073A(5/08)
= Drain
(TAB)

Related parts for IXFH14N100Q2

IXFH14N100Q2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I Note 1 DS(on D25, © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXFH14N100Q2 g Maximum Ratings 1000 1000 ±30 ± 2.5 20 500 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. 6 Characteristic Values Min. Typ. Max. 1000 3.0 5.5 ± ...

Page 2

... D25 40 0.25 °C/W 0.21 Characteristic Values Min. Typ. Max 1.5 300 ns = 100 V 0 5,049,961 5,237,481 6,162,665 6,404,065 B1 5,063,307 5,381,025 6,259,123 B1 6,534,343 5,187,117 5,486,715 6,306,728 B1 6,583,505 IXFH14N100Q2 TO-247 (IXFH) Outline ∅ Terminals Gate 2 - Drain nC Dim. Millimeter Inches nC Min. Max. Min. A 4.7 5.3 ...

Page 3

... IXYS CORPORATION, All rights reserved Fig 3.2 2.8 2 0 -50 Value vs. I Fig. 6. Drain Current vs. Case Temperature D25 º º -50 IXFH14N100Q2 Fig. 2. Extended Output Characteristics @ 25º Volts DS Normalized to 0.5 I Value vs. DS(on) D25 Junction Temperature - Degrees Centigrade J - Degrees Centigrade ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 6.0 6.5 7 º 0 iss 0.1 C oss 0.01 C rss 0.001 0. IXFH14N100Q2 Fig. 8. Transconductance º º º Amperes D Fig. 10. Gate Charge V = 500V 0mA nanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0 Pulse Width - milliseconds IXYS REF: F_14N100Q2 (7F)5-28-08-B 24 ...

Related keywords