IXTK250N10 IXYS, IXTK250N10 Datasheet

MOSFET N-CH 100V 250A TO-264AA

IXTK250N10

Manufacturer Part Number
IXTK250N10
Description
MOSFET N-CH 100V 250A TO-264AA
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet

Specifications of IXTK250N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
250A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
430nC @ 10V
Input Capacitance (ciss) @ Vds
12700pF @ 25V
Power - Max
730W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
250 A
Power Dissipation
730 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
250
Rds(on), Max, Tj=25°c, (?)
0.005
Ciss, Typ, (pf)
7800
Qg, Typ, (nc)
390
Trr, Typ, (ns)
150
Pd, (w)
730
Rthjc, Max, (k/w)
0.17
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK250N10
Manufacturer:
NICHICON
Quantity:
30 000
© 2004 IXYS All rights reserved
High Current
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
D
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C unless otherwise specified)
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Test conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
I
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
T
T
S
C
J
J
C
C
C
J
GS
GS
GS
C
C
DS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C MOSFET chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V DC, V
= V
= 0 V
= 10 V, I
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
TM
D
D
= 1 mA
D
= 250 µA
= 90 A
G
FET
= 2 Ω
DS
= 0
GS
= 1.0 MΩ
DD
≤ V
T
T
J
J
= 125°C
= 25°C
DSS
JM
100
IXTK 250N10
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum ratings
1000
0.7/6
±20
±30
100
100
250
730
150
300
4.0
75
90
80
10
5
±200
4.0
50
Nm/lb.in.
Max.
1 mA
5 mΩ
V/ns
mJ
° C
° C
° C
° C
nA
µA
W
V
A
A
A
A
V
g
J
V
V
V
V
TO-264 AA (IXTK)
G = Gate
S = Source
Features
Applications
Advantages
V
I
R
Low R
Rugged polysilicon gate cell structure
International standard package
Fast switching times
DC-DC Converters
Linear Regulators
Motor controls
DC choppers
Switched-mode power supplies
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
D25
DSS
DS(on)
G
DS (on)
D
S
HDMOS
= 100
= 250
=
D
Tab = Drain
= Drain
TM
DS99022A(04/04)
5 mΩ Ω Ω Ω Ω
process
A
V
D (TAB)

Related parts for IXTK250N10

IXTK250N10 Summary of contents

Page 1

... ± GSS DSS DS DSS DS(on Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2004 IXYS All rights reserved IXTK 250N10 Maximum ratings 100 = 1.0 MΩ 100 ±20 ±30 250 75 1000 4.0 ≤ DSS 730 -55 ... +150 150 -55 ... +150 300 0.7/6 10 Characteristic Values Min ...

Page 2

... GS Pulse test, t ≤ 300 µs, duty cycle d ≤ 30A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic values Min. Typ. Max. 75 110 12700 ...

Page 3

... V - Volts D S Fig. 5. Drain Current vs. Case Tem perature 270 240 210 180 150 120 -50 - Degrees Centigrade C © 2004 IXYS All rights reserved º C 360 320 280 240 200 7V 160 120 1.2 1.4 1.6 º C 1.8 1.6 7V 1.4 6V 1.2 0 ...

Page 4

... Safe Operating Area 10000 R Limit DS(on) 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 330 300 270 240 210 180 150 120 100000 10000 1000 ...

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