IXTK40P50P IXYS, IXTK40P50P Datasheet

MOSFET P-CH 500V 40A TO-264

IXTK40P50P

Manufacturer Part Number
IXTK40P50P
Description
MOSFET P-CH 500V 40A TO-264
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTK40P50P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
205nC @ 10V
Input Capacitance (ciss) @ Vds
11500pF @ 25V
Power - Max
890W
Mounting Type
Through Hole
Package / Case
TO-264
Vdss, Max, (v)
-500.0
Id(cont), Tc=25°c, (a)
-40.0
Rds(on), Max, Tj=25°c, (?)
0.230
Ciss, Typ, (pf)
11500
Qg, Typ, (nc)
205
Trr, Typ, (ns)
477
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Mounting Torque
PLUS247
TO-264
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
= - 250μA
D
≤ V
= - 1mA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
, T
(PLUS247)
(TO-264)
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTK40P50P
IXTX40P50P
20..120/4.5..27
- 500
- 2.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
- 500
- 500
- 120
- 40
- 40
±20
±30
890
150
300
260
3.5
Typ.
10
10
6
- 250 μA
±100 nA
- 4.0
Nm/lb.in.
- 50 μA
230 mΩ
Max.
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-264 (IXTK)
G = Gate
S = Source
PLUS247 (IXTX)
Features
Advantages
Applications
D25
International Standard Packages
Rugged PolarP
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
G
≤ ≤ ≤ ≤ ≤
=
=
D
S
D
TAB = Drain
TM
- 500V
- 40A
Process
230mΩ Ω Ω Ω Ω
= Drain
DS99935B(03/09)
(TAB)
(TAB)

Related parts for IXTK40P50P

IXTK40P50P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTK40P50P IXTX40P50P Maximum Ratings - 500 = 1MΩ - 500 GS ±20 ± 120 3.5 ≤ 150° 890 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..27 1.13/ Characteristic Values Min. ...

Page 2

... I = 0.5 • DSS D D25 75 0.15 Characteristic Values Min. Typ. JM 477 14 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTK40P50P IXTX40P50P TO-264 (IXTK) Outline Max 0.14 °C/W °C/W Max 160 A PLUS 247 (IXTX) Outline μC A ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 40A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -5 0 -50 - Degrees Centigrade J IXTK40P50P IXTX40P50P = -10V - -21 -24 -27 - 20A vs 20A D 100 125 150 100 125 150 ...

Page 4

... Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) - 10 150º 25ºC C Single Pulse - 0.1 10 100 - - V - Volts DS IXTK40P50P IXTX40P50P 40ºC J 25ºC 125ºC -45 -50 -55 -60 -65 -70 140 160 180 200 220 25µs 100µs 1ms 10ms 100ms DC 1000 - ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTK40P50P IXTX40P50P 0.1 1 IXYS REF: T_40P50P(B9) 03-06-08-A 10 ...

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