IXFK360N15T2 IXYS, IXFK360N15T2 Datasheet - Page 4

• Manufacturer Part Number: IXFK360N15T2
• Description: MOSFET N-CH 150V 360A TO264
• Manufacturer: IXYS
• Series: GigaMOS™r
• Type: GigaMOS Trench T2 HiperFetr

Specifications of IXFK360N15T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 360A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 715nC @ 10V
• Input Capacitance (ciss) @ Vds: 47500pF @ 25V
• Power - Max: 1670W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Product: MOSFET Gate Drivers
• Rise Time: 170 ns
• Fall Time: 265 ns
• Supply Current: 100 A
• Maximum Power Dissipation: 1670 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 115 ns
• Maximum Turn-on Delay Time: 50 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 360 A
• Output Voltage: 150 V
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 360
• Rds(on), Max, Tj=25°c, (?): 0.004
• Ciss, Typ, (pf): 47500
• Qg, Typ, (nc): 715
• Pd, (w): 1670
• Rthjc, Max, (k/w): 0.09
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
350
300
250
200
150
100
100
50
80
60
40
20
0
0
2.5
0.2
0
f
= 1 MHz
0.3
5
3.0
0.4
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
3.5
0.5
Fig. 11. Capacitance
15
Intrinsic Diode
V
T
J
GS
V
0.6
= 150ºC
V
SD
DS
- Volts
T
4.0
- Volts
20
J
- Volts
= 150ºC
- 40ºC
0.7
25ºC
25
0.8
C iss
C oss
C rss
4.5
T
J
30
= 25ºC
0.9
5.0
35
1.0
1.1
5.5
40
1,000.0
100.0
10.0
450
400
350
300
250
200
150
100
1.0
0.1
50
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
T
T
Single Pulse
R
J
C
DS(on)
V
I
I
= 175ºC
= 25ºC
D
G
DS
20
= 180A
= 10mA
External Lead Limit
100
= 75V
Limit
Fig. 12. Forward-Bias Safe Operating Area
40
200
60
Fig. 8. Transconductance
10
Fig. 10. Gate Charge
80
300
Q
G
I
- NanoCoulombs
D
V
100
- Amperes
DS
400
- Volts
120
IXFK360N15T2
IXFX360N15T2
500
140
100
T
J
160
= - 40ºC
600
25µs
100µs
1ms
10ms
100ms
DC
IXYS REF:F_360N15T2(9V)8-19-09
25ºC
150ºC
180
700
200
1,000
220
800